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The BLC10G22XS-570AVTZ is a 570 W LDMOS packaged asymmetric Doherty power transistor designed for base station applications in the 2110 MHz to 2180 MHz frequency range. It features dual N-channel architecture with a drain-source breakdown voltage of 65 V and operates within a case temperature range of -40 °C to +125 °C. The device utilizes an SOT1258-4 air cavity plastic earless flanged package. Typical performance at Tcase = 25 °C includes a power gain of 15.7 dB, drain efficiency of 48%, and adjacent channel power ratio of -33 dBc under 1-carrier W-CDMA test conditions.
Verify the specific ordering suffix against official Ampleon documentation to confirm packaging variations such as tray or reel configurations. Ensure compliance with RoHS requirements by checking the product details on the manufacturer website. Confirm that the component meets the absolute maximum rating system standards before integration into production designs.
Select this component for asymmetric Doherty amplifier architectures requiring high efficiency and ruggedness in the 2110 MHz to 2180 MHz band. Evaluate thermal resistance characteristics relative to the expected average power load to ensure junction temperature limits are not exceeded during continuous operation.
This part belongs to the BLC10G22XS series of power LDMOS transistors manufactured by Ampleon. It is specifically engineered for wireless communication infrastructure, offering optimized performance for multi-carrier base station deployments where linearity and efficiency are critical design parameters.
Consult official Ampleon substitution guides for verified equivalents. Do not assume functional compatibility with other LDMOS families without verifying pinout, impedance matching, and thermal specifications.