BLC10G22XS-600AVTZ

Overview

The BLC10G22XS-600AVT is a dual N-channel LDMOS power transistor designed for base station applications in the 2110 MHz to 2170 MHz frequency range. It features an air cavity plastic earless flanged SOT1258-4 package with six leads. The device operates at a drain-source voltage of 32 V and delivers 600 W output power. Key electrical parameters include a drain-source breakdown voltage of 65 V, main amplifier on-state resistance of 67.1 mΩ, and peak amplifier on-state resistance of 36.3 mΩ. Typical performance metrics include a power gain of 15.4 dB and a drain efficiency of 48% under 1-carrier W-CDMA test conditions.

Feature Summary

• Designed for asymmetrical Doherty configurations with lower output capacitance
• Internally matched for simplified circuit integration
• Integrated electrostatic discharge protection mechanisms
• Optimized for low memory effects to support digital pre-distortion

Applications

• RF power amplifiers for base stations
• Multi-carrier applications in the 2110 MHz to 2170 MHz range

Procurement Notes

Verify component authenticity by cross-referencing the manufacturer's official datasheet documentation. Confirm that the specific ordering suffix matches the required packaging configuration. Ensure compliance with RoHS directives as specified in the product details. Validate ESD handling procedures prior to installation to prevent damage to sensitive internal structures.

Selection Notes

Select this component for high-power asymmetric Doherty architectures requiring operation within the 2110 MHz to 2170 MHz band. Evaluate thermal management requirements against the junction-to-case thermal resistance specification. Ensure the driving circuitry supports the specified gate-source voltage limits and quiescent current settings for optimal linearity and efficiency.

Part Context

This part belongs to the BLC10G series of LDMOS transistors manufactured by Ampleon. It is specifically engineered for wireless infrastructure, targeting modern cellular base station deployments. The device utilizes advanced lateral diffusion technology to achieve high power density and ruggedness suitable for demanding RF environments.

Replacement Considerations

Consult official Ampleon documentation for verified substitute part numbers. Do not assume functional equivalence with other models without verifying pinout compatibility and electrical specifications.

FAQ

What is the maximum load mismatch the device can withstand?

The BLC10G22XS-600AVT can withstand a load mismatch corresponding to a Voltage Standing Wave Ratio (VSWR) of 10:1 through all phases.

How is the device internally configured?

The transistor is internally matched and features integrated electrostatic discharge protection to facilitate ease of use in amplifier designs.

What is the primary design advantage regarding signal distortion?

The device is designed for low memory effects, providing excellent capability for digital pre-distortion linearization techniques.