ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：RF MOSFET SOT1258-1
- Series：-
- Mfr：Ampleon USA Inc.
- Package：Tape & Reel (TR)
- Technology：-
- Frequency：-
- Gain：-
- Voltage - Test：-
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：-
- Power - Output：-
- Voltage - Rated：-
- Grade：-
- Qualification：-
- Mounting Type：Chassis Mount
- Package / Case：SOT1258-1
- Supplier Device Package：SOT1258-1
- Configuration：-
Download product information
Overview
The BLC10G27LS-320AVTY is a dual N-channel RF LDMOS transistor manufactured by Ampleon. It operates within the frequency range of 2.5 GHz to 2.7 GHz, delivering an output power of 320 W with a gain of 15.4 dB. The device features a drain-source breakdown voltage (VDS) of 65 V and on-resistance values of 96.6 mΩ and 170 mΩ. Housed in an SOT1258-1-7 surface-mount package, it supports a maximum operating temperature of +225°C and includes moisture sensitivity classification.
Feature Summary
- Dual N-channel configuration for balanced RF performance
- High-power capability at 320 W output
- Optimized for Ka-band frequency operations
Applications
- RF power amplifier stages
- Wireless communication systems
- Industrial RF heating applications
Procurement Notes
Verify component authenticity through authorized Ampleon distributors or certified suppliers. Confirm package integrity and moisture sensitivity handling procedures prior to assembly. Ensure compatibility with existing PCB footprints and thermal management designs. Request original datasheets and test reports to validate electrical parameters against specifications.
Selection Notes
Select this component for high-frequency applications requiring substantial output power within the 2.5–2.7 GHz band. Consider the SOT1258-1-7 package constraints and thermal dissipation requirements. Evaluate the 65 V breakdown voltage against circuit supply needs. Compare gain and efficiency metrics with alternative devices if specific bandwidth or linearity requirements differ.
Part Context
This part belongs to Ampleon's portfolio of RF LDMOS transistors designed for robust performance in demanding environments. The BLC series typically targets broadband and multi-standard applications. The specific model integrates advanced semiconductor technology to achieve high power density while maintaining signal fidelity in critical RF infrastructure.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult Ampleon technical support for validated cross-references.
