BLC10G27XS-551AVTY

Overview

The BLC10G27XS-551AVT is a 550 W LDMOS asymmetric Doherty power transistor designed for base station applications in the 2620 MHz to 2690 MHz frequency range. It features a dual N-channel architecture with a drain-source breakdown voltage of 65 V and operates within a case temperature range of -40 °C to +125 °C. The device utilizes an SOT1258-4 air cavity plastic earless flanged package. Typical performance at Tcase = 25 °C includes a power gain of 13.5 dB, drain efficiency of 46%, and output power of 91 W under 1-carrier W-CDMA test conditions.

Feature Summary

• Optimized for low memory effects to support excellent digital pre-distortion capability
• Lower output capacitance improves performance specifically in Doherty configurations
• Internally matched design simplifies integration and usage
• Integrated ESD protection ensures robustness against electrostatic discharge

Applications

• RF power amplifiers for base stations
• Multi-carrier applications in the 2620 MHz to 2690 MHz frequency range
• Asymmetrical Doherty amplifier architectures

Procurement Notes

Verify component authenticity by checking the manufacturer's official documentation and part markings. Ensure handling procedures comply with ESD sensitivity standards, as the device requires specific precautions during storage and assembly. Confirm that the ordering suffix matches the required packaging format before finalizing procurement orders.

Selection Notes

Select this component for high-efficiency Doherty amplifier designs operating between 2620 MHz and 2690 MHz. Consider the thermal resistance characteristics when designing heat sinks, as junction-to-case thermal resistance varies with power levels. Ensure the gate-source voltage limits are respected to maintain reliability and prevent permanent damage during operation.

Part Context

This transistor belongs to Ampleon's portfolio of RF power transistors engineered for wireless infrastructure. It represents a specialized solution for modern cellular base stations requiring high linearity and efficiency. The device integrates main and peak amplifier sections into a single package to facilitate complex Doherty circuit topologies.

Replacement Considerations

Consult official Ampleon substitution guides for verified alternatives. Do not assume functional compatibility with other models based solely on similar power ratings or frequency ranges without verifying pinout and electrical specifications.

FAQ

What is the maximum load mismatch the device can withstand?

The BLC10G27XS-551AVT can withstand a load mismatch corresponding to a VSWR of 10:1 through all phases under specified operating conditions.

How is the device protected against electrostatic discharge?

The transistor includes integrated ESD protection, meeting CDM classification C3 and HBM classification 2 standards.

What is the typical drain efficiency at 91 W output power?

Under 1-carrier W-CDMA test conditions at Tcase = 25 °C, the typical drain efficiency is 46% when delivering 91 W of output power.