BLC10G27XS-551AVTZ

Overview

The BLC10G27XS-551AVTZ is a 400 W RF MOSFET transistor manufactured by Ampleon USA Inc. It operates at a frequency of 27 MHz with a drain-source voltage (Vds) of 65 V and a continuous drain current (Id) of 80 A. The device features a typical on-resistance (Rds(on)) of 3.5 mΩ and provides a gain of 14 dB. Designed for robust performance, it functions within a temperature range of -40°C to +100°C. The component utilizes a surface-mount package suitable for high-power radio frequency applications requiring efficient thermal management and stable electrical characteristics under demanding conditions.

Feature Summary

• High power output capability of 400 W for industrial heating and plasma generation
• Low on-resistance for improved efficiency and reduced heat dissipation
• Wide operating temperature range ensuring reliability in harsh environments
• Surface-mount packaging for automated assembly and compact design integration

Applications

• Industrial RF heating systems
• Plasma generation equipment
• Dielectric heating applications

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct pinout and thermal pad configuration. Confirm RoHS compliance status through the latest product release notes. Cross-reference the part number with authorized distributors to validate authenticity and traceability. Check for any recent engineering change notices that may affect mechanical dimensions or electrical parameters before finalizing procurement orders.

Selection Notes

Select this component based on its 400 W power rating and 27 MHz operating frequency suitability for specific industrial loads. Evaluate thermal resistance requirements against the system's cooling capabilities given the 80 A current handling. Ensure the 65 V drain-source voltage aligns with the circuit's maximum operational limits. Consider the surface-mount package type for compatibility with existing PCB layouts and assembly processes.

Part Context

This RF MOSFET belongs to Ampleon's high-power transistor portfolio designed for industrial applications. It complements other devices in the series offering varying power levels and frequencies. The technology leverages advanced silicon MOSFET processes to deliver high gain and efficiency. It serves as a critical active element in RF power amplifiers used for material processing and plasma generation technologies.

Replacement Considerations

Consult the official replacement guide for direct equivalents. Verify pin-to-pin compatibility and electrical parameter overlaps. Ensure thermal interface materials are compatible with alternative packages. Review application notes for any circuit adjustments required when substituting with different manufacturers' components.