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The BLC2425M10LS250 is a 250 W LDMOS power transistor designed for continuous wave applications in the 2400 MHz to 2500 MHz frequency range. It operates at a drain-source voltage of 32 V and delivers an output power of 260 W with a typical drain efficiency of 68.7% and power gain of 14.4 dB. The device features a maximum junction temperature of 225 °C, a thermal resistance from junction to case of 0.33 K/W, and a gate-source threshold voltage ranging from 1.68 V to 2.68 V.
Verify the specific ordering suffix against official documentation to confirm package version and compliance status. Ensure that procurement channels provide valid manufacturer traceability. Confirm RoHS compliance details directly through official product data sheets or authorized distributor listings prior to finalizing acquisition orders.
Select this component for designs requiring high power density within the ISM band. Verify thermal management capabilities to maintain junction temperatures below the 225 °C limit. Ensure impedance matching networks align with the specified source and load impedances for optimal performance across the target frequency range.
This part belongs to Ampleon's LDMOS power transistor portfolio tailored for industrial and consumer RF energy applications. It utilizes a plastic air cavity earless flanged package (SOT1270-1) to facilitate efficient heat dissipation while maintaining electrical isolation. The device integrates internal matching networks to simplify circuit implementation.
Consult official substitution lists for compatible alternatives. Verify pinout compatibility and thermal characteristics before implementing any cross-reference components.