BLC2425M10LS250Z

BLC2425M10LS250Z

  • Description:RF MOSFET LDMOS 32V SOT1270-1
  • Series:-

SKU:1736b10440a7 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 32V SOT1270-1
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Technology:LDMOS
  • Frequency:2.4GHz ~ 2.5GHz
  • Gain:14.4dB
  • Voltage - Test:32 V
  • Current Rating (Amps):2.8µA
  • Noise Figure:-
  • Current - Test:100 mA
  • Power - Output:250W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-1270-1
  • Supplier Device Package:SOT-1270-1
  • Configuration:-

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BLC2425M10LS250Z

Overview

The BLC2425M10LS250 is a 250 W LDMOS power transistor designed for continuous wave applications in the 2400 MHz to 2500 MHz frequency range. It operates at a drain-source voltage of 32 V and delivers an output power of 260 W with a typical drain efficiency of 68.7% and power gain of 14.4 dB. The device features a maximum junction temperature of 225 °C, a thermal resistance from junction to case of 0.33 K/W, and a gate-source threshold voltage ranging from 1.68 V to 2.68 V.

Feature Summary

  • High efficiency operation suitable for continuous wave applications
  • Excellent ruggedness capable of withstanding high voltage standing wave ratios
  • Integrated electrostatic discharge protection
  • Broadband design optimized for the 2400 MHz to 2500 MHz range

Applications

  • RF power amplifiers for commercial cooking equipment
  • Industrial heating systems
  • Scientific and medical RF applications

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package version and compliance status. Ensure that procurement channels provide valid manufacturer traceability. Confirm RoHS compliance details directly through official product data sheets or authorized distributor listings prior to finalizing acquisition orders.

Selection Notes

Select this component for designs requiring high power density within the ISM band. Verify thermal management capabilities to maintain junction temperatures below the 225 °C limit. Ensure impedance matching networks align with the specified source and load impedances for optimal performance across the target frequency range.

Part Context

This part belongs to Ampleon's LDMOS power transistor portfolio tailored for industrial and consumer RF energy applications. It utilizes a plastic air cavity earless flanged package (SOT1270-1) to facilitate efficient heat dissipation while maintaining electrical isolation. The device integrates internal matching networks to simplify circuit implementation.

Replacement Considerations

Consult official substitution lists for compatible alternatives. Verify pinout compatibility and thermal characteristics before implementing any cross-reference components.

BLC2425M10LS250ZBLC2425M10LS250Z

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