BLC2425M8LS300PY

BLC2425M8LS300PY

$87.73
  • Description:RF MOSFET LDMOS 32V SOT1250-1
  • Series:-

SKU:c4d4af662645 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 32V SOT1250-1
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:2.45GHz
  • Gain:17.5dB
  • Voltage - Test:32 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:20 mA
  • Power - Output:300W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT1250-1
  • Supplier Device Package:SOT1250-1
  • Configuration:Dual, Common Source

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BLC2425M8LS300PY

Overview

The BLC2425M8LS300P is a 300 W LDMOS power transistor designed for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz. It is assembled in a high performance plastic package suitable for high-power CW applications. The device operates with a drain-source voltage of 32 V and delivers an output power of 300 W. At this operating point, the typical power gain is 17.0 dB and the drain efficiency reaches 58.0%. The component features integrated ESD protection and is internally matched for broadband operation.

Feature Summary

  • High efficiency and excellent thermal stability
  • Excellent ruggedness capable of withstanding load mismatch
  • Integrated ESD protection and internal matching

Applications

  • RF power amplifiers for CW applications in the 2400 MHz to 2500 MHz frequency range
  • Industrial, Scientific and Medical (ISM) applications
  • Heating applications

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct packaging and reel specifications. Confirm RoHS compliance status as indicated in the latest datasheet revision. Ensure handling procedures adhere to electrostatic discharge precautions during installation.

Selection Notes

Select this component for designs requiring high power output within the 2.4 GHz ISM band. Verify that the application circuit can support the required 32 V drain supply and manage the thermal resistance characteristics. Ensure the design accommodates the specified gate-source voltage limits and junction temperature constraints.

Part Context

This part belongs to Ampleon's LDMOS power transistor portfolio targeting RF heating and industrial applications. It utilizes a plastic earless flanged package (SOT1250-1) designed for robust performance in continuous wave operations. The device integrates internal matching networks to simplify amplifier design.

Replacement Considerations

Consult official substitution lists for compatible devices. Verify pinout compatibility and electrical parameters before replacing existing components in established designs.

BLC2425M8LS300PYBLC2425M8LS300PY
$87.73
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