BLC2425M8LS300PZ

BLC2425M8LS300PZ

$101.38
  • Description:RF MOSFET LDMOS 32V SOT1250-1
  • Series:-

SKU:62faef79f94a Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:RF MOSFET LDMOS 32V SOT1250-1
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Bulk,Tray,Tray
  • Technology:LDMOS
  • Frequency:2.45GHz
  • Gain:17.5dB
  • Voltage - Test:32 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:20 mA
  • Power - Output:300W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT1250-1
  • Supplier Device Package:SOT1250-1
  • Configuration:Dual, Common Source

Download product information

BLC2425M8LS300PZ

Overview

The BLC2425M8LS300P is a 300 W LDMOS power transistor designed for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz. It is optimized for high-power CW operation with an internal matching network. The device operates with a drain-source voltage of 32 V and delivers 300 W output power with a typical gain of 17.0 dB and drain efficiency of 58.0% in class-AB mode. Key electrical parameters include a drain-source breakdown voltage of 65 V, a junction temperature limit of 225 °C, and a thermal resistance from junction to case of 0.2 K/W.

Feature Summary

  • High efficiency and excellent ruggedness suitable for demanding RF environments
  • Integrated ESD protection and internally matched for simplified circuit design
  • Excellent thermal stability and easy power control capabilities

Applications

  • RF power amplifiers for CW applications in the 2400 MHz to 2500 MHz range
  • Industrial, Scientific and Medical (ISM) equipment
  • Heating systems utilizing RF energy

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct package version and compliance status. Confirm that the component meets all necessary regulatory standards for the intended deployment region before finalizing procurement orders.

Selection Notes

Select this component for designs requiring high power density within the 2.4 GHz ISM band. Ensure the application circuit supports the specified 32 V drain supply and provides adequate heat sinking to maintain the junction temperature below the 225 °C maximum rating during continuous wave operation.

Part Context

This part belongs to Ampleon's portfolio of LDMOS power transistors engineered for broadband RF applications. It utilizes a plastic earless flanged cavity package (SOT1250-1) to facilitate efficient thermal management and robust mechanical mounting in high-performance amplifier modules.

Replacement Considerations

Consult official substitution lists for compatible devices. Verify pinout compatibility and thermal characteristics when considering alternative models.

BLC2425M8LS300PZBLC2425M8LS300PZ
$101.38
Buy Now