SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BLC2425M8LS300P is a 300 W LDMOS power transistor designed for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz. It is optimized for high-power CW operation with an internal matching network. The device operates with a drain-source voltage of 32 V and delivers 300 W output power with a typical gain of 17.0 dB and drain efficiency of 58.0% in class-AB mode. Key electrical parameters include a drain-source breakdown voltage of 65 V, a junction temperature limit of 225 °C, and a thermal resistance from junction to case of 0.2 K/W.
Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct package version and compliance status. Confirm that the component meets all necessary regulatory standards for the intended deployment region before finalizing procurement orders.
Select this component for designs requiring high power density within the 2.4 GHz ISM band. Ensure the application circuit supports the specified 32 V drain supply and provides adequate heat sinking to maintain the junction temperature below the 225 °C maximum rating during continuous wave operation.
This part belongs to Ampleon's portfolio of LDMOS power transistors engineered for broadband RF applications. It utilizes a plastic earless flanged cavity package (SOT1250-1) to facilitate efficient thermal management and robust mechanical mounting in high-performance amplifier modules.
Consult official substitution lists for compatible devices. Verify pinout compatibility and thermal characteristics when considering alternative models.