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The BLC2425M9LS250 is a 250 W LDMOS power transistor designed for Industrial, Scientific and Medical (ISM) applications operating between 2400 MHz and 2500 MHz. It features high efficiency and excellent ruggedness with integrated ESD protection. The device is internally input and output matched for broadband operation. Typical performance at VDS = 32 V, IDq = 20 mA, and Tcase = 25 °C in class-AB operation includes a drain efficiency of 61% and power gain of 18 dB at 2450 MHz CW. Limiting values specify a drain-source voltage of 65 V, gate-source voltage range of -6 V to +13 V, and a maximum junction temperature of 225 °C.
Verify component authenticity by checking the manufacturer's official documentation against the specific part number BLC2425M9LS250. Confirm compliance with Directive 2002/95/EC regarding Restriction of Hazardous Substances (RoHS). Ensure handling procedures adhere to ANSI/ESD S20.20 standards due to CDM Class C1 and HBM Class 1C sensitivity ratings.
Select this component for high-power continuous wave applications requiring robust performance within the 2.4 GHz ISM band. The internal matching network simplifies circuit design. Verify thermal management capabilities as the junction-to-case thermal resistance is 0.290 K/W at 250 W output power. Ensure the application environment supports the specified operating temperatures and voltage limits.
This device belongs to Ampleon’s LDMOS power transistor portfolio tailored for industrial RF heating and ISM bands. It utilizes an air cavity plastic earless flanged package (SOT1270-1) to facilitate efficient heat dissipation. The product is distinct from automotive-qualified variants and is intended strictly for non-life-critical industrial environments.
No public confirmed substitute part numbers are documented in the provided datasheet.
The device is classified as Charged Device Model (CDM) Class C1 and Human Body Model (HBM) Class 1C.
No, the product is not automotive qualified unless expressly stated otherwise in the data sheet.
The typical drain efficiency is 61% under continuous wave conditions at 2450 MHz with VDS = 32 V and IDq = 20 mA.