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The BLC2425M9XS250Z is an RF LDMOS transistor manufactured by Ampleon, designed for high-power applications in the 2.4 GHz to 2.5 GHz ISM band. It features a 65 V drain-source breakdown voltage and a typical on-resistance of 40.5 mΩ. The device delivers a maximum output power of 250 W with a gain of 14.4 dB. It operates at frequencies between 2.4 GHz and 2.5 GHz and supports a maximum operating temperature of +225°C. Packaged in SOT-1270-1-3 surface-mount format, it utilizes N-channel technology.
Verify component authenticity through authorized Ampleon distributors or verified supply chain channels. Confirm package integrity upon receipt, as surface-mount devices are sensitive to physical damage. Ensure storage conditions comply with moisture sensitivity levels specified in the datasheet to prevent soldering defects during reflow processes.
Select this component for designs requiring 250 W output power within the 2.4–2.5 GHz range. Evaluate thermal resistance requirements against the 225°C maximum junction temperature limit. Ensure matching networks support the specific impedance characteristics required for optimal gain and efficiency at the target operating frequency.
This part belongs to the BLC series of RF power transistors from Ampleon, specifically engineered for robust operation in demanding industrial environments. The series leverages advanced LDMOS technology to provide high linearity and power density. The BLC2425M9XS250Z represents a standard configuration within this family, balancing power output with thermal stability for continuous wave applications.
Publicly confirmed substitute part numbers are not available in the provided documentation.