BLC6G27-100,112

BLC6G27-100,112

  • Description:RF MOSFET 28V SOT895A
  • Series:-

SKU:c2964be32a97 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET 28V SOT895A
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tube
  • Technology:-
  • Frequency:-
  • Gain:-
  • Voltage - Test:-
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:-
  • Power - Output:14W
  • Voltage - Rated:28 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-895A
  • Supplier Device Package:SOT-895A
  • Configuration:-

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BLC6G27-100,112

Overview

The BLC6G27-100,112 is a dual N-channel LDMOS RF power transistor manufactured by Ampleon. It operates within the 2.3 GHz to 2.7 GHz frequency range and delivers a typical output power of 100 W with a gain of 18 dB. The device features a drain-source breakdown voltage (Vds) of 65 V and a maximum operating temperature of +150 °C. Packaged in the SOT1275-1-7 format for surface mount installation, it is designed for high-efficiency radio frequency amplification applications.

Feature Summary

  • Dual N-channel LDMOS architecture providing balanced performance
  • Optimized for broadband operation across the 2.3–2.7 GHz spectrum
  • High thermal tolerance supporting demanding operational environments

Applications

  • Base station power amplifiers
  • Broadband communication systems
  • Industrial, Scientific, and Medical (ISM) equipment

Procurement Notes

Verify the specific ordering code suffix against official manufacturer documentation to ensure correct package variant and reel specifications. Confirm RoHS compliance status through the latest datasheet revision. Cross-reference the part number with authorized distributor catalogs to validate authenticity and current availability status before finalizing procurement orders.

Selection Notes

Select this component for designs requiring 100 W output power in the 2.3–2.7 GHz band. Ensure the PCB layout supports the SOT1275-1-7 footprint and thermal management requirements. Verify that the biasing circuitry accommodates the 65 V drain voltage rating and matches the impedance network for optimal gain and efficiency at the target frequency.

Part Context

This device belongs to Ampleon’s robust LDMOS portfolio, engineered for high reliability in wireless infrastructure. It complements other broadband transistors in the series, offering a balance of power density and linearity. The technology leverages advanced silicon LDMOS processes to meet the stringent demands of modern cellular base stations and industrial RF heating applications.

Replacement Considerations

Consult official substitution guides for compatible alternatives such as the BLC6G27-100 without the suffix or equivalent devices from the same family. Verify pinout compatibility and thermal characteristics when considering cross-brand replacements.

BLC6G27-100,112BLC6G27-100,112

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