BLC8G09XS-400AVTY

Overview

The BLC8G09XS-400AVT is a 400 W LDMOS asymmetric Doherty power transistor designed for base station applications in the 791 MHz to 960 MHz frequency range. It operates at VDS = 32V with typical drain efficiency of 46% and power gain of 17.2 dB under 1-carrier W-CDMA conditions. The device features a maximum drain-source breakdown voltage of 65V, junction temperature up to 225°C, and case temperature from -40°C to +125°C. Thermal resistance from junction to case ranges from 0.24 k/W to 0.27 k/W depending on output power. It utilizes an air cavity plastic earless flanged package (SOT1258-4) with six leads.

Feature Summary

• Designed for low memory effects providing excellent digital pre-distortion capability
• Lower output capacitance for improved performance in Doherty applications
• Internally matched for ease of use
• Integrated ESD protection

Applications

• RF power amplifiers for base stations
• Multi carrier applications in the 791 MHz to 960 MHz frequency range

Procurement Notes

Verify component authenticity by checking the manufacturer's official documentation against the part number BLC8G09XS-400AVT. Confirm the package type matches SOT1258-4 specifications. Ensure handling procedures comply with CDM Class C2A and HBM Class 2 ESD sensitivity ratings to prevent damage during installation and testing.

Selection Notes

Select this component for asymmetric Doherty amplifier designs requiring high ruggedness and efficiency in cellular base stations. Verify that the operating frequency falls within the 791 MHz to 960 MHz range. Ensure thermal management supports the specified junction temperature limits and that the circuit design accommodates the internal matching network characteristics provided in the impedance data.

Part Context

This device belongs to Ampleon's portfolio of RF power transistors optimized for telecommunications infrastructure. It represents a specific solution for modern base station architectures utilizing Doherty topology to enhance efficiency under back-off conditions. The product line focuses on delivering high reliability and linear performance for wideband code division multiple access signals.

Replacement Considerations

Consult official Ampleon documentation for verified substitute part numbers. Do not assume cross-compatibility with other LDMOS devices without verifying pinout, impedance, and electrical characteristics against the BLC8G09XS-400AVT datasheet.

FAQ

What is the load mismatch tolerance for this transistor in Doherty operation?

The BLC8G09XS-400AVT can withstand a load mismatch corresponding to VSWR = 10:1 through all phases when operated at VDS = 32V, IDq = 880 mA, and PL = 170 W.

How is the gate-source quiescent voltage defined for the main device?

For the main device, the gate-source quiescent voltage (VGSq) is typically 2.1 V when measured at VDS = 32 V and IDq = 880 mA.

What ESD classification does this component hold?

The component holds a Charged Device Model (CDM) classification of C2A and a Human Body Model (HBM) classification of 2.