BLC8G09XS-400AVTZ

BLC8G09XS-400AVTZ

  • Description:RF MOSFET LDMOS 32V SOT1258-7
  • Series:-

SKU:d2574aa693b2 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 32V SOT1258-7
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Technology:LDMOS
  • Frequency:791MHz ~ 960MHz
  • Gain:17dB
  • Voltage - Test:32 V
  • Current Rating (Amps):2.8µA
  • Noise Figure:-
  • Current - Test:880 mA
  • Power - Output:540W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-1258-7
  • Supplier Device Package:SOT-1258-7
  • Configuration:-

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BLC8G09XS-400AVTZ

Overview

The BLC8G09XS-400AVT is a 400 W LDMOS asymmetric Doherty power transistor designed for base station applications in the 791 MHz to 960 MHz frequency range. It operates at VDS = 32V with typical drain efficiency of 46% and power gain of 17.2 dB under 1-carrier W-CDMA conditions. The device features a peak output power of 540 W and an adjacent channel power ratio (ACPR) of -33 dBc. It utilizes an air cavity plastic earless flanged package (SOT1258-4) with six leads, including dedicated pins for main and peak amplifier sections.

Feature Summary

  • Designed specifically for asymmetric Doherty power amplifier configurations
  • Internally matched structure simplifies circuit integration
  • Low thermal resistance ensures stable operation under high power loads
  • Integrated electrostatic discharge protection mechanisms

Applications

  • RF power amplifiers for cellular base stations
  • Multi-carrier applications within the 791 MHz to 960 MHz band
  • Asymmetric Doherty amplifier architectures

Procurement Notes

Verify component authenticity through official Ampleon channels or authorized distributors. Confirm the specific SOT1258-4 package variant matches design requirements. Ensure handling procedures adhere to ESD sensitivity standards, as the device requires protection against static discharge during storage and assembly processes.

Selection Notes

Select this component for designs requiring high linearity and efficiency in Doherty topologies. Verify impedance matching networks align with the provided load-pull data for both main and peak devices. Consider thermal management solutions capable of maintaining case temperatures within the specified operating range to ensure reliability.

Part Context

This part belongs to the Ampleon BLC series of RF power transistors, engineered for wireless infrastructure. It represents a specialized solution for modern base station architectures that demand high peak-to-average power ratio handling capabilities while maintaining strict spectral purity requirements.

Replacement Considerations

Consult official Ampleon documentation for qualified substitute part numbers. Direct replacements must match the SOT1258-4 package and electrical characteristics for seamless integration into existing Doherty amplifier designs without redesigning the matching network.

BLC8G09XS-400AVTZBLC8G09XS-400AVTZ

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