BLC8G20LS-400AVZ

Overview

The BLC8G20LS-400AV is a 400 W LDMOS asymmetric Doherty power transistor designed for base station applications in the 1800 MHz to 2000 MHz frequency range. It features an air cavity plastic earless flanged package (SOT1258-1) with six leads. The device operates at a drain-source voltage of 32 V and delivers 85 W average output power with 15.5 dB gain under 1-carrier W-CDMA testing conditions. It includes integrated ESD protection and is internally matched for ease of use.

Feature Summary

• Designed for conventional and inverted Doherty amplifier configurations
• Low thermal resistance providing excellent thermal stability
• Lower output capacitance for improved performance in Doherty applications
• Internally matched for ease of use

Applications

• RF power amplifiers for base stations
• Multi carrier applications in the 1800 MHz to 2000 MHz frequency range

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation, as revisions may alter package details or electrical characteristics. Confirm RoHS compliance status and ensure handling procedures meet CDM Class C2A and HBM Class 2 requirements to prevent electrostatic discharge damage during assembly.

Selection Notes

Select this component for high-efficiency asymmetric Doherty designs requiring ruggedness under load mismatch conditions. Ensure the application supports the specified 32 V drain-source voltage and main amplifier quiescent current of 800 mA. Verify that the PCB layout accommodates the SOT1258-1 flanged package dimensions and thermal management needs.

Part Context

This part belongs to Ampleon's LDMOS power transistor portfolio optimized for cellular infrastructure. It serves as a core active element in modern base station RF front-ends, specifically targeting W-CDMA and related multi-carrier modulation schemes within the 1800 MHz band.

Replacement Considerations

Consult official substitution lists for verified equivalents. Generic replacements may not match the specific impedance profiles or Doherty optimization required for this asymmetric configuration.