BLC8G21LS-160AVY

BLC8G21LS-160AVY

$61.33
  • Description:RF MOSFET LDMOS 28V DFM6
  • Series:-

SKU:7a31c993357e Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V DFM6
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:LDMOS
  • Frequency:1.88GHz ~ 2.03GHz
  • Gain:15dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:200 mA
  • Power - Output:22.5W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-1275-1
  • Supplier Device Package:DFM6
  • Configuration:Dual, Common Source

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BLC8G21LS-160AVY

Overview

The BLC8G21LS-160AV is a dual N-channel LDMOS transistor designed for base station applications in the 1805 MHz to 2025 MHz frequency range. It features an air cavity plastic earless flanged package (SOT1275-1) with six leads, including dedicated video decoupling pins. The device supports a drain-source voltage of 65 V and operates at junction temperatures up to 225 °C. Typical performance includes a power gain of 13.8 dB to 17.29 dB and drain efficiency reaching 60.51% under maximum power load conditions.

Feature Summary

  • Designed for broadband operation across the 1805 MHz to 2025 MHz spectrum
  • Features decoupling leads to enable improved video bandwidth capability
  • Internally matched structure for ease of use and high power gain
  • Integrated ESD protection compliant with C2A and HBM Class 2 standards

Applications

  • RF power amplifiers for base station applications
  • Multi-carrier applications in the 1805 MHz to 2025 MHz frequency range
  • Doherty amplifier configurations requiring high ruggedness

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct packaging and handling specifications. Confirm that the component meets RoHS Directive 2002/95/EC requirements for your intended application. Ensure proper ESD precautions are observed during storage and assembly due to the device's sensitivity classification.

Selection Notes

Select this component for designs requiring high efficiency and excellent thermal stability in the 1805 MHz to 2025 MHz band. The internal matching simplifies circuit design, while the robust construction supports demanding Doherty operations. Verify impedance matching networks against the provided load-pull data tables for optimal power gain and efficiency targets.

Part Context

This part belongs to Ampleon's LDMOS transistor portfolio, specifically engineered for wireless infrastructure. It utilizes advanced lateral diffusion metal oxide semiconductor technology to deliver high power density. The SOT1275-1 package provides a compact form factor suitable for modern base station modules requiring efficient heat dissipation and reliable long-term operation.

Replacement Considerations

Consult official Ampleon substitution guides for verified alternatives. Cross-referencing requires matching key parameters such as breakdown voltage, package type, and frequency range to ensure functional compatibility without redesigning the host system.

BLC8G21LS-160AVYBLC8G21LS-160AVY
$61.33
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