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The BLC8G22LS-450AV is a 450 W LDMOS asymmetric Doherty power transistor designed for base station applications in the 2110 MHz to 2170 MHz frequency range. It operates with a drain-source voltage of 28 V and features an air cavity plastic earless flanged package (SOT1258-1). The device provides a typical power gain of 14 dB, drain efficiency of 41%, and adjacent channel power ratio of -33 dBc under 1-carrier W-CDMA test conditions. It includes integrated ESD protection and is internally matched for ease of use.
Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct package version and compliance status. Confirm that the component meets all required environmental directives and handling precautions before integration into production designs.
Select this component for asymmetric Doherty amplifier architectures requiring high efficiency and linearity in cellular base stations. Ensure the design accommodates the specified gate-source voltages and case temperature limits to maintain optimal performance and reliability during continuous operation.
This part belongs to Ampleon's portfolio of LDMOS power transistors optimized for wireless infrastructure. It is specifically engineered to address the demands of modern multi-carrier modulation schemes, offering a balance of high power output and robust operational characteristics for telecommunications equipment.
Consult official Ampleon substitution guides for verified replacements. Do not assume pin compatibility or electrical equivalence with other models without explicit manufacturer confirmation.
The maximum junction temperature is 225 °C.
Yes, the BLC8G22LS-450AV is internally matched for ease of use.
The device has a Charged Device Model (CDM) classification of C2A and a Human Body Model (HBM) classification of 2.