BLC8G22LS-450AVY

BLC8G22LS-450AVY

  • Description:RF MOSFET LDMOS 28V DFM6
  • Series:-

SKU:1780814c1239 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V DFM6
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:LDMOS
  • Frequency:2.11GHz ~ 2.17GHz
  • Gain:14dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:1:00 AM
  • Power - Output:85W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-1258-3
  • Supplier Device Package:DFM6
  • Configuration:Dual, Common Source

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BLC8G22LS-450AVY

Overview

The BLC8G22LS-450AV is a 450 W LDMOS asymmetric Doherty power transistor designed for base station applications in the 2110 MHz to 2170 MHz frequency range. It operates with a drain-source voltage of 28 V and features an air cavity plastic earless flanged package (SOT1258-1). The device provides a typical power gain of 14 dB, drain efficiency of 41%, and adjacent channel power ratio of -33 dBc under 1-carrier W-CDMA test conditions. It includes integrated ESD protection and is internally matched for ease of use.

Feature Summary

  • Excellent ruggedness capable of withstanding high load mismatch
  • Low thermal resistance providing excellent thermal stability
  • Lower output capacitance for improved performance in Doherty applications
  • Designed for low memory effects providing excellent digital pre-distortion capability

Applications

  • RF power amplifiers for base stations
  • Multi carrier applications in the 2110 MHz to 2170 MHz frequency range

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct package version and compliance status. Confirm that the component meets all required environmental directives and handling precautions before integration into production designs.

Selection Notes

Select this component for asymmetric Doherty amplifier architectures requiring high efficiency and linearity in cellular base stations. Ensure the design accommodates the specified gate-source voltages and case temperature limits to maintain optimal performance and reliability during continuous operation.

Part Context

This part belongs to Ampleon's portfolio of LDMOS power transistors optimized for wireless infrastructure. It is specifically engineered to address the demands of modern multi-carrier modulation schemes, offering a balance of high power output and robust operational characteristics for telecommunications equipment.

Replacement Considerations

Consult official Ampleon substitution guides for verified replacements. Do not assume pin compatibility or electrical equivalence with other models without explicit manufacturer confirmation.

FAQ

What is the maximum junction temperature?

The maximum junction temperature is 225 °C.

Is the device internally matched?

Yes, the BLC8G22LS-450AV is internally matched for ease of use.

What is the ESD sensitivity classification?

The device has a Charged Device Model (CDM) classification of C2A and a Human Body Model (HBM) classification of 2.

BLC8G22LS-450AVYBLC8G22LS-450AVY

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