BLC8G22LS-450AVZ

Overview

The BLC8G22LS-450AV is a 450 W LDMOS packaged asymmetric Doherty power transistor designed for base station applications at frequencies from 2110 MHz to 2170 MHz. It operates with a drain-source voltage of 28 V and features an air cavity plastic earless flanged package (SOT1258-1). The device delivers typical performance including 14 dB power gain, 41% drain efficiency, and -33 dBc adjacent channel power ratio under 1-carrier W-CDMA test conditions.

Feature Summary

• Excellent ruggedness capable of withstanding high load mismatch in Doherty operation
• Low thermal resistance providing excellent thermal stability
• Lower output capacitance for improved performance in Doherty applications
• Designed for low memory effects providing excellent digital pre-distortion capability

Applications

• RF power amplifiers for base stations
• Multi carrier applications in the 2110 MHz to 2170 MHz frequency range

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current catalog to ensure correct package version and compliance status. Confirm RoHS directive compliance requirements prior to procurement. Check for any product change notices or obsolescence announcements that may affect long-term supply availability.

Selection Notes

Select this component for asymmetric Doherty amplifier designs requiring high linearity and efficiency in the 2110 MHz to 2170 MHz band. Ensure the design accommodates the specified gate-source voltages and quiescent currents. Verify thermal management capabilities to maintain case temperature within the recommended operating range.

Part Context

This part belongs to Ampleon's portfolio of LDMOS power transistors optimized for cellular infrastructure. It is specifically engineered for modern base station architectures utilizing Doherty topology to enhance power efficiency and linearity for wideband modulation schemes like W-CDMA.

Replacement Considerations

Consult official Ampleon documentation for verified substitute part numbers. Do not assume functional equivalence with other LDMOS devices without comprehensive electrical and mechanical validation.