BLC8G27LS-100AVY

BLC8G27LS-100AVY

$60.01
  • Description:RF MOSFET LDMOS 28V DFM6
  • Series:-

SKU:4a42620aa9df Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V DFM6
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT),Bulk
  • Technology:LDMOS
  • Frequency:2.5GHz ~ 2.69GHz
  • Gain:15.5dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:250 mA
  • Power - Output:17.8W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-1275-1
  • Supplier Device Package:DFM6
  • Configuration:Dual, Common Source

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BLC8G27LS-100AVY

Overview

The BLC8G27LS-100AV is a 100 W LDMOS asymmetrical Doherty power transistor designed for base station applications in the 2496 MHz to 2690 MHz frequency range. It features a drain-source voltage of 65 V, a junction temperature rating up to 225 °C, and an internal thermal resistance from junction to case ranging from 0.289 K/W to 0.314 K/W depending on output power. The device operates at a test voltage of 28 V with a quiescent current of 250 mA for the main device. Typical performance includes a power gain of 15.5 dB, a drain efficiency of 45%, and an adjacent channel power ratio of -30 dBc under 1-carrier W-CDMA conditions.

Feature Summary

  • Designed for low memory effects to provide excellent pre-distortability
  • Internally matched for ease of use
  • Integrated ESD protection compliant with C2A and HBM Class 2 standards
  • Decoupling leads enable improved video bandwidth

Applications

  • RF power amplifier for LTE base stations
  • Multi carrier applications in the 2496 MHz to 2690 MHz frequency range

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct package version and testing configuration. Confirm RoHS compliance status and check for any recent product data sheet revisions that may affect design-in parameters or legal disclaimers before finalizing procurement specifications.

Selection Notes

Select this component for asymmetrical Doherty architectures requiring high ruggedness and low thermal resistance. Ensure the application circuit accommodates the specified gate-source threshold voltage and quiescent voltage ranges. Verify impedance matching networks align with the provided load-pull data for maximum power or drain efficiency targets within the operating frequency band.

Part Context

This part belongs to Ampleon's LDMOS power transistor portfolio specifically engineered for cellular infrastructure. It utilizes an air cavity plastic earless flanged package (SOT1275-1) to facilitate efficient heat dissipation and robust mounting in high-power RF environments typical of modern telecommunications base stations.

Replacement Considerations

Consult the official Ampleon datasheet for verified substitute part numbers. Do not assume functional equivalence with other models without cross-referencing pin configurations, electrical ratings, and impedance characteristics.

FAQ

What is the typical video bandwidth capability?

The device demonstrates a typical video bandwidth of 130 MHz in a Doherty demo board at 2600 MHz.

Is the device suitable for automotive applications?

No, unless expressly stated otherwise, the product is not automotive qualified and is not suitable for automotive equipment or applications.

How does the device handle load mismatches?

It can withstand a load mismatch corresponding to a VSWR of 10:1 through all phases under specified CW operating conditions.

BLC8G27LS-100AVYBLC8G27LS-100AVY
$60.01
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