BLC8G27LS-100AVZ

BLC8G27LS-100AVZ

$53.64
  • Description:RF MOSFET LDMOS 28V DFM6
  • Series:-

SKU:944d58ed1973 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V DFM6
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Bulk,Tray
  • Technology:LDMOS
  • Frequency:2.5GHz ~ 2.69GHz
  • Gain:15.5dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:250 mA
  • Power - Output:17.8W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-1275-1
  • Supplier Device Package:DFM6
  • Configuration:Dual, Common Source

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BLC8G27LS-100AVZ

Overview

The BLC8G27LS-100AV is a 100 W LDMOS asymmetrical Doherty power transistor designed for base station applications in the 2496 MHz to 2690 MHz frequency range. It features an air cavity plastic earless flanged package (SOT1275-1) with six leads, including dedicated video decoupling pins. The device operates at a drain-source voltage of 28 V and provides typical gain of 15.5 dB with drain efficiency up to 45% under 1-carrier W-CDMA conditions. It includes integrated ESD protection and is internally matched for ease of use.

Feature Summary

  • Designed specifically for asymmetrical Doherty amplifier configurations
  • Features low output capacitance to enhance Doherty performance
  • Includes internal matching networks and decoupling leads for improved video bandwidth
  • Compliant with RoHS Directive 2002/95/EC

Applications

  • RF power amplifiers for LTE base stations
  • Multi-carrier applications within the 2496 MHz to 2690 MHz band

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct packaging and handling specifications. Confirm that the component meets all required environmental standards for the intended deployment environment before finalizing procurement orders.

Selection Notes

Select this component for designs requiring high ruggedness and low memory effects in Doherty architectures. Ensure the application circuit accommodates the SOT1275-1 package dimensions and utilizes appropriate thermal management solutions to maintain junction temperature within specified limits during peak operation.

Part Context

This part belongs to Ampleon's BLC series of LDMOS power transistors. It is engineered for wireless infrastructure, offering high efficiency and excellent linearity. The device is optimized for modern cellular standards requiring robust performance under varying load mismatch conditions.

Replacement Considerations

Consult official Ampleon substitution guides for verified alternatives. Cross-referencing requires matching package type, pinout configuration, and electrical characteristics to ensure functional compatibility without redesigning the host circuit.

BLC8G27LS-100AVZBLC8G27LS-100AVZ
$53.64
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