BLC8G27LS-140AVY

BLC8G27LS-140AVY

$54.56
  • Description:RF MOSFET LDMOS 28V DFM6
  • Series:-

SKU:a0b5a176e05a Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V DFM6
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR),Bulk
  • Technology:LDMOS
  • Frequency:2.5GHz ~ 2.69GHz
  • Gain:14.5dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:320 mA
  • Power - Output:28W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-1275-1
  • Supplier Device Package:DFM6
  • Configuration:Dual, Common Source

Download product information

BLC8G27LS-140AVY

Overview

The BLC8G27LS-140AV is a 140 W LDMOS asymmetrical Doherty power transistor designed for base station applications in the 2496 MHz to 2690 MHz frequency range. It operates at a drain-source voltage of 28 V with a breakdown voltage of 65 V. The device provides a typical power gain of 14.5 dB and achieves a drain efficiency of up to 43% under 1-carrier W-CDMA conditions. It features an air cavity plastic earless flanged package (SOT1275-1) with six leads, including dedicated video decoupling pins.

Feature Summary

  • Designed for low memory effects to provide excellent pre-distortability
  • Internally matched for ease of use
  • Integrated ESD protection compliant with C2A and HBM Class 2 standards
  • Decoupling leads enable improved video bandwidth

Applications

  • RF power amplifier for LTE base stations
  • Multi-carrier applications in the 2496 MHz to 2690 MHz frequency range

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to ensure compatibility with required packaging or testing configurations. Confirm that the component meets RoHS Directive 2002/95/EC compliance requirements for your intended deployment. Always consult the latest product data sheet before initiating design integration.

Selection Notes

Select this component for asymmetrical Doherty architectures requiring high ruggedness and low thermal resistance. Ensure the application supports the specified 28 V operating voltage and utilizes appropriate impedance matching networks for the main and peak devices. Verify that the system can accommodate the internal ESD protection characteristics during handling.

Part Context

This part belongs to Ampleon's portfolio of RF power transistors optimized for cellular infrastructure. It is specifically engineered to address the linearity and efficiency demands of modern multi-carrier base station amplifiers. The device integrates both main and peak transistor functions within a single package to simplify circuit design.

Replacement Considerations

Consult official Ampleon substitution guides for verified equivalent models. Do not assume functional interchangeability with other LDMOS packages without verifying pinout and electrical specifications.

FAQ

What is the maximum load mismatch the device can withstand?

The BLC8G27LS-140AV can withstand a load mismatch corresponding to a VSWR of 10:1 through all phases under specified test conditions.

How many video decoupling leads does the package contain?

The SOT1275-1 package includes two video decoupling leads, one for the main device and one for the peak device.

What is the typical video bandwidth achieved in Doherty operation?

The device demonstrates a typical video bandwidth of 110 MHz in a Doherty demo board at 2600 MHz.

BLC8G27LS-140AVYBLC8G27LS-140AVY
$54.56
Buy Now