BLC8G27LS-140AVZ

BLC8G27LS-140AVZ

$54.56
  • Description:RF MOSFET LDMOS 28V DFM6
  • Series:-

SKU:2595f8951256 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V DFM6
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Bulk,Tray
  • Technology:LDMOS
  • Frequency:2.5GHz ~ 2.69GHz
  • Gain:14.5dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:320 mA
  • Power - Output:28W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-1275-1
  • Supplier Device Package:DFM6
  • Configuration:Dual, Common Source

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BLC8G27LS-140AVZ

Overview

The BLC8G27LS-140AV is a 140 W LDMOS asymmetrical Doherty power transistor designed for base station applications in the 2496 MHz to 2690 MHz frequency range. It operates at VDS = 28 V with a drain efficiency of up to 43% and gain of 15 dB under 1-carrier W-CDMA conditions. The device features a maximum output power of 178 W at 3 dB gain compression and supports a video bandwidth of 110 MHz. It utilizes an SOT1275-1 air cavity plastic earless flanged package with six leads, including dedicated video decoupling pins.

Feature Summary

  • Designed for low memory effects to provide excellent pre-distortability
  • Internally matched structure for ease of use
  • Decoupling leads enable improved video bandwidth performance
  • Lower output capacitance optimizes performance in Doherty configurations

Applications

  • RF power amplifier for LTE base stations
  • Multi-carrier applications in the 2496 MHz to 2690 MHz range

Procurement Notes

Verify component authenticity through authorized Ampleon distribution channels. Confirm RoHS compliance status and check for ESD sensitivity markings consistent with C2A/Class 2 classifications. Ensure storage and handling procedures adhere to IEC/ST 61340-5 standards to prevent electrostatic discharge damage during assembly.

Selection Notes

Select this component for asymmetrical Doherty architectures requiring high ruggedness against load mismatches up to 10:1 VSWR. Evaluate thermal resistance characteristics relative to case temperature requirements. Verify impedance matching networks align with the provided main and peak device load-pull data for optimal power and efficiency targets.

Part Context

This part belongs to the BLC series of LDMOS transistors from Ampleon, specifically engineered for cellular infrastructure. It serves as a critical active element in modern multi-standard base station power amplifiers, replacing older technologies to improve energy efficiency and linearity in dense urban deployment scenarios.

Replacement Considerations

Consult official Ampleon documentation for verified substitute part numbers. Do not assume functional equivalence with other LDMOS devices without validating pinout compatibility, impedance parameters, and thermal specifications.

BLC8G27LS-140AVZBLC8G27LS-140AVZ
$54.56
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