BLC8G27LS-160AVJ

BLC8G27LS-160AVJ

  • Description:RF MOSFET LDMOS 28V DFM6
  • Series:-

SKU:63c7fdcac10f Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V DFM6
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:2.5GHz ~ 2.69GHz
  • Gain:14.3dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:250 mA
  • Power - Output:31.6W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-1275-1
  • Supplier Device Package:DFM6
  • Configuration:Dual, Common Source

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BLC8G27LS-160AVJ

Overview

The BLC8G27LS-160AV is a 160 W LDMOS packaged asymmetrical Doherty power transistor designed for base station applications at frequencies from 2496 MHz to 2690 MHz. It operates with a drain-source voltage of 28 V and features decoupling leads for improved video bandwidth. The device includes integrated ESD protection, low thermal resistance, and internal matching. Typical performance in a Doherty demo board yields a gain of 14.5 dB, drain efficiency of 43%, and ACPR of -30 dBc under 1-carrier W-CDMA conditions.

Feature Summary

  • Designed for low memory effects providing excellent pre-distortability
  • Decoupling leads enable improved video bandwidth
  • Lower output capacitance improves performance in Doherty applications
  • Internally matched for ease of use

Applications

  • RF power amplifier for W-CDMA base stations
  • Multi carrier applications in the 2496 MHz to 2690 MHz frequency range

Procurement Notes

Verify component authenticity by checking the manufacturer's official documentation against the part number BLC8G27LS-160AV. Ensure compliance with RoHS Directive 2002/95/EC requirements. Confirm that the package version matches SOT1275-1 specifications. Validate handling procedures for electrostatic sensitive devices prior to integration into production systems.

Selection Notes

Select this component for asymmetrical Doherty architectures requiring high efficiency and ruggedness. Verify impedance matching networks using provided load-pull data tables. Ensure thermal management meets junction temperature limits of 225 °C. Confirm compatibility with 28 V supply rails and appropriate gate biasing configurations for main and peak devices.

Part Context

This device belongs to Ampleon's portfolio of RF power transistors optimized for cellular infrastructure. It utilizes Laterally Diffused Metal-Oxide Semiconductor technology to deliver high linearity and power density. The product is specifically engineered to meet stringent spectral mask requirements for modern wideband communication standards.

Replacement Considerations

Consult official Ampleon documentation for verified substitute part numbers. Cross-reference pinout configurations and thermal characteristics before implementation.

BLC8G27LS-160AVJBLC8G27LS-160AVJ

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