BLC8G27LS-160AVU

Overview

The BLC8G27LS-160AV is a 160 W LDMOS asymmetrical Doherty power transistor designed for base station applications in the 2496 MHz to 2690 MHz frequency range. It features an air cavity plastic earless flanged package (SOT1275-1) with six leads, including separate main and peak device connections. The component operates at a drain-source voltage of 65 V maximum and achieves typical drain efficiency up to 64% under pulsed conditions. It exhibits excellent ruggedness, supporting a VSWR of 10:1 through all phases, and provides approximately 130 MHz video bandwidth for improved performance in complex modulation environments.

Feature Summary

• Asymmetrical Doherty architecture with integrated ESD protection
• Low thermal resistance ensuring high thermal stability
• Decoupling leads to enhance video bandwidth capabilities
• Internally matched design for simplified circuit integration

Applications

• RF power amplifier for W-CDMA base stations
• Multi-carrier applications within the 2496 MHz to 2690 MHz band

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to confirm package version and compliance status. Ensure that the procurement channel sources directly from authorized distributors or the manufacturer to guarantee authenticity. Confirm RoHS directive compliance requirements prior to finalizing orders, as specifications may be subject to revision.

Selection Notes

Select this component for designs requiring high efficiency and linearity in asymmetrical Doherty configurations. Verify that the application environment supports the specified junction temperature limits and thermal management requirements. Ensure the input and output impedance matching networks align with the provided load-pull data for optimal power gain and efficiency performance.

Part Context

This part belongs to Ampleon's portfolio of RF power transistors engineered for telecommunications infrastructure. It utilizes Laterally Diffused Metal-Oxide Semiconductor technology optimized for high-frequency operation. The device is specifically tailored for modern cellular base station architectures demanding robust performance under high peak-to-average power ratio signals.

Replacement Considerations

Consult official Ampleon substitution guides for verified equivalent models. Do not assume functional compatibility with other LDMOS devices without validating pinout, thermal characteristics, and impedance parameters against the target design requirements.