BLC8G27LS-180AVZ

BLC8G27LS-180AVZ

$57.01
  • Description:RF MOSFET LDMOS 28V SOT1275-3
  • Series:-

SKU:5cfd7a8d2b4e Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V SOT1275-3
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Bulk,Tray
  • Technology:LDMOS
  • Frequency:2.5GHz ~ 2.69GHz
  • Gain:14dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:200 mA
  • Power - Output:28W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-1275-3
  • Supplier Device Package:SOT-1275-3
  • Configuration:Dual, Common Source

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BLC8G27LS-180AVZ

Overview

The BLC8G27LS-180AV is an asymmetrical Doherty power transistor manufactured by Ampleon USA Inc. It utilizes LDMOS technology and operates within the 2496 MHz to 2690 MHz frequency range. The device provides a typical average output power of 28 W with a drain efficiency of 43.5% under 1-carrier W-CDMA conditions at VDS = 28 V. It features a maximum drain-source voltage of 65 V, a junction temperature rating up to 225 °C, and a thermal resistance from junction to case of 0.38 K/W. The component is housed in an SOT1275-1 air cavity plastic earless flanged package.

Feature Summary

  • Asymmetrical design optimized for high efficiency across broadband operation
  • Integrated ESD protection compliant with C2A and HBM Class 2 standards
  • Low thermal resistance ensuring excellent thermal stability
  • Decoupling leads designed to improve video bandwidth performance

Applications

  • RF power amplifier for W-CDMA base stations
  • Multi-carrier applications in the 2496 MHz to 2690 MHz frequency range
  • Doherty power amplifier architectures

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct packaging and handling specifications. Confirm RoHS compliance status as per Directive 2002/95/EC before integration. Ensure proper electrostatic discharge precautions are implemented during storage and assembly due to the device's sensitivity classification.

Selection Notes

Select this component for designs requiring asymmetrical Doherty configurations in the 2.5 GHz band. Evaluate the impedance data provided for main and peak devices to match load-pull requirements. Consider the ruggedness capabilities regarding VSWR tolerance when designing matching networks for harsh operating environments.

Part Context

This part belongs to the BLC series of LDMOS transistors developed by Ampleon for cellular infrastructure. It succeeds previous iterations in the family, maintaining compatibility with established base station architectures while offering improved efficiency and linearity characteristics for modern multi-carrier modulation schemes.

Replacement Considerations

Consult official Ampleon substitution guides for verified alternatives. Cross-referencing requires matching package type SOT1275-1 and electrical parameters such as breakdown voltage and power output.

BLC8G27LS-180AVZBLC8G27LS-180AVZ
$57.01
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