BLC8G27LS-210PVZ

BLC8G27LS-210PVZ

  • Description:RF MOSFET LDMOS 28V 8DFM
  • Series:-

SKU:c7d7da635858 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V 8DFM
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Technology:LDMOS
  • Frequency:2.6GHz ~ 2.7GHz
  • Gain:17dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:1.73 A
  • Power - Output:65W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-1251-3
  • Supplier Device Package:8-DFM
  • Configuration:Dual, Common Source

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BLC8G27LS-210PVZ

Overview

The BLC8G27LS-210PV is a 200 W LDMOS power transistor designed for base station applications in the 2500 MHz to 2700 MHz frequency range. It features improved video bandwidth and low memory effects, making it suitable for multi-carrier systems. The device operates with a drain-source voltage of 65 V and a gate-source voltage limit of +13 V. Typical performance at 28 V includes a power gain of 17 dB and a drain efficiency of 30% under two-carrier W-CDMA conditions. It utilizes an SOT1251-1 air cavity plastic earless flanged package.

Feature Summary

  • Decoupling leads provide excellent thermal stability and improved video bandwidth performance.
  • Lower output capacitance enhances performance in Doherty amplifier configurations.
  • Designed for broadband operation with low memory effects to support pre-distortion.
  • Internally matched structure simplifies circuit integration.

Applications

  • RF power amplifiers for base stations
  • Multi-carrier applications in the 2500 MHz to 2700 MHz range

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct package versioning. Confirm RoHS compliance status and ESD handling requirements prior to procurement. Check for any product discontinuation notices or alternative package revisions that may affect supply chain availability.

Selection Notes

Select this component for high-efficiency base station designs requiring robust ruggedness against load mismatches. Ensure the application supports the specified 28 V operating voltage and class-AB biasing conditions. Verify that the PCB layout accommodates the SOT1251-1 flanged package dimensions and thermal management needs.

Part Context

This part belongs to Ampleon's LDMOS power transistor portfolio optimized for wireless infrastructure. It is engineered to deliver high linearity and efficiency in modern cellular networks. The device integrates internal matching networks to reduce external component count and simplify RF design processes.

Replacement Considerations

Consult official Ampleon substitution guides for verified replacements. Cross-reference pinouts and thermal characteristics before integrating alternative components.

FAQ

What is the typical video bandwidth of the BLC8G27LS-210PV?

The device exhibits a typical video bandwidth of 150 MHz in a class-AB test circuit within the 2.6 GHz to 2.7 GHz band.

How does the BLC8G27LS-210PV handle load mismatches?

It can withstand a load mismatch corresponding to a VSWR of 10:1 through all phases under specified operating conditions.

What package type is used for this transistor?

The BLC8G27LS-210PV uses an SOT1251-1 air cavity plastic earless flanged package with eight leads.

BLC8G27LS-210PVZBLC8G27LS-210PVZ

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