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The BLC8G27LS-210PV is a 200 W LDMOS power transistor designed for base station applications in the 2500 MHz to 2700 MHz frequency range. It features improved video bandwidth and low memory effects, making it suitable for multi-carrier systems. The device operates with a drain-source voltage of 65 V and a gate-source voltage limit of +13 V. Typical performance at 28 V includes a power gain of 17 dB and a drain efficiency of 30% under two-carrier W-CDMA conditions. It utilizes an SOT1251-1 air cavity plastic earless flanged package.
Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct package versioning. Confirm RoHS compliance status and ESD handling requirements prior to procurement. Check for any product discontinuation notices or alternative package revisions that may affect supply chain availability.
Select this component for high-efficiency base station designs requiring robust ruggedness against load mismatches. Ensure the application supports the specified 28 V operating voltage and class-AB biasing conditions. Verify that the PCB layout accommodates the SOT1251-1 flanged package dimensions and thermal management needs.
This part belongs to Ampleon's LDMOS power transistor portfolio optimized for wireless infrastructure. It is engineered to deliver high linearity and efficiency in modern cellular networks. The device integrates internal matching networks to reduce external component count and simplify RF design processes.
Consult official Ampleon substitution guides for verified replacements. Cross-reference pinouts and thermal characteristics before integrating alternative components.
The device exhibits a typical video bandwidth of 150 MHz in a class-AB test circuit within the 2.6 GHz to 2.7 GHz band.
It can withstand a load mismatch corresponding to a VSWR of 10:1 through all phases under specified operating conditions.
The BLC8G27LS-210PV uses an SOT1251-1 air cavity plastic earless flanged package with eight leads.