BLC8G27LS-240AVU

BLC8G27LS-240AVU

  • Description:RF MOSFET LDMOS 28V DFM8
  • Series:-

SKU:eacf2cff7fac Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V DFM8
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Technology:LDMOS
  • Frequency:2.5GHz ~ 2.69GHz
  • Gain:14dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:500 mA
  • Power - Output:56W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-1252-1
  • Supplier Device Package:DFM8
  • Configuration:Dual, Common Source

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BLC8G27LS-240AVU

Overview

The BLC8G27LS-240AV is a 240 W LDMOS asymmetric Doherty power transistor designed for base station applications in the 2500 MHz to 2700 MHz frequency range. It features an air cavity plastic earless flanged package (SOT1252-1) with eight leads and integrated ESD protection. The device operates at a drain-source voltage of 28 V, delivering typical output powers up to 200 W under continuous wave conditions. Key electrical parameters include a drain-source breakdown voltage of 65 V, a maximum junction temperature of 225 °C, and a thermal resistance from junction to case of 0.3 K/W.

Feature Summary

  • Asymmetric design optimized for high efficiency across broadband operations
  • Low output capacitance tailored for improved performance in Doherty configurations
  • Internally matched structure to facilitate ease of use
  • Integrated electrostatic discharge protection

Applications

  • RF power amplifiers for base stations
  • Multi-carrier applications in the 2500 MHz to 2700 MHz frequency range

Procurement Notes

Verify component authenticity by cross-referencing the manufacturer's official documentation against the physical markings on the device. Confirm that the specific ordering suffix matches the required package version. Ensure compliance with all absolute maximum ratings during handling and installation to maintain operational reliability.

Selection Notes

Evaluate the suitability of this transistor based on its asymmetric architecture and low output capacitance characteristics. Consider the thermal management requirements dictated by the specified junction-to-case thermal resistance. Verify compatibility with the intended load-pull impedance values for both main and peak amplifier devices within the target frequency band.

Part Context

This component belongs to Ampleon's portfolio of RF power transistors utilizing Laterally Diffused Metal-Oxide Semiconductor technology. It is specifically engineered for wireless communication infrastructure, providing robust performance in demanding multi-carrier environments while maintaining high linearity and efficiency standards.

Replacement Considerations

Consult official manufacturer documentation for confirmed substitute part numbers. Do not assume functional equivalence with other models without verifying pinout compatibility, electrical specifications, and thermal characteristics.

BLC8G27LS-240AVUBLC8G27LS-240AVU

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