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The BLC8G27LS-240AV is a 240 W LDMOS asymmetric Doherty power transistor designed for base station applications in the 2500 MHz to 2700 MHz frequency range. It features an air cavity plastic earless flanged package (SOT1252-1) with eight leads and integrated ESD protection. The device operates at a drain-source voltage of 28 V, delivering typical output powers up to 200 W under continuous wave conditions. Key electrical parameters include a drain-source breakdown voltage of 65 V, a maximum junction temperature of 225 °C, and a thermal resistance from junction to case of 0.3 K/W.
Verify component authenticity by cross-referencing the manufacturer's official documentation against the physical markings on the device. Confirm that the specific ordering suffix matches the required package version. Ensure compliance with all absolute maximum ratings during handling and installation to maintain operational reliability.
Evaluate the suitability of this transistor based on its asymmetric architecture and low output capacitance characteristics. Consider the thermal management requirements dictated by the specified junction-to-case thermal resistance. Verify compatibility with the intended load-pull impedance values for both main and peak amplifier devices within the target frequency band.
This component belongs to Ampleon's portfolio of RF power transistors utilizing Laterally Diffused Metal-Oxide Semiconductor technology. It is specifically engineered for wireless communication infrastructure, providing robust performance in demanding multi-carrier environments while maintaining high linearity and efficiency standards.
Consult official manufacturer documentation for confirmed substitute part numbers. Do not assume functional equivalence with other models without verifying pinout compatibility, electrical specifications, and thermal characteristics.