BLC8G27LS-245AVJ

BLC8G27LS-245AVJ

  • Description:RF MOSFET LDMOS 28V 8DFM
  • Series:-

SKU:722c4bc29b2f Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V 8DFM
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:2.5GHz ~ 2.69GHz
  • Gain:14.5dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:500 mA
  • Power - Output:56W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-1251-2
  • Supplier Device Package:8-DFM
  • Configuration:Dual, Common Source

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BLC8G27LS-245AVJ

Overview

The BLC8G27LS-245AV is a 240 W LDMOS asymmetric Doherty power transistor designed for base station applications in the 2500 MHz to 2700 MHz frequency range. It features excellent ruggedness, high efficiency, and low thermal resistance. The device is internally matched and includes integrated ESD protection. Typical performance at Tcase = 25 °C, VDS = 28 V, and IDq = 500 mA (main) shows a power gain of 14.5 dB, drain efficiency of 43%, and ACPR of -35 dBc for 1-carrier W-CDMA. The package is SOT1251-2.

Feature Summary

  • Asymmetric design optimized for Doherty amplifier applications
  • Internally matched for ease of use
  • Integrated ESD protection compliant with C2A and HBM Class 2 standards
  • RoHS compliant

Applications

  • RF power amplifiers for base stations
  • Multi-carrier applications in the 2500 MHz to 2700 MHz range

Procurement Notes

Verify the manufacturer origin as Ampleon Netherlands B.V., not NXP USA Inc., despite potential distributor listings. Confirm the specific package type SOT1251-2 matches your board layout requirements. Ensure handling procedures adhere to ESD sensitivity standards due to the component's classification. Check for any recent datasheet revisions that may update electrical characteristics or legal disclaimers before finalizing procurement specifications.

Selection Notes

Select this component for designs requiring high efficiency and linearity in asymmetric Doherty configurations within the 2500 MHz to 2700 MHz band. Consider the internal matching network which simplifies RF circuit design. Evaluate thermal management capabilities given the junction-to-case thermal resistance. Verify compatibility with digital pre-distortion algorithms due to low memory effects.

Part Context

This power LDMOS transistor belongs to the family of broadband devices intended for cellular infrastructure. It supports modern modulation schemes like W-CDMA with high peak-to-average ratios. The device is part of Ampleon's portfolio for base station power amplification, focusing on robust performance under varying load conditions.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

FAQ

What is the typical video bandwidth (VBW) capability?

The device shows a typical video bandwidth of 110 MHz in a Doherty demo board at 2600 MHz.

How does the device handle load mismatches?

It can withstand a load mismatch corresponding to VSWR = 10:1 through all phases under specified operating conditions.

What is the maximum junction temperature?

The maximum junction temperature is 225 °C.

BLC8G27LS-245AVJBLC8G27LS-245AVJ

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