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The BLC8G27LS-60AVH is an RF MOSFET LDMOS transistor designed for base station applications. It operates in the 2.3 GHz to 2.69 GHz frequency range with a drain-source voltage of 28V. The device provides 60W output power and features dual common source configuration. Key electrical parameters include high gain and efficiency, suitable for asymmetrical Doherty amplifier architectures. It is housed in a DFM6 package and exhibits excellent ruggedness and thermal stability.
Verify component authenticity through authorized Ampleon distributors or certified partners. Confirm datasheet revision and package marking alignment. Check for moisture sensitivity handling requirements during storage and reflow soldering processes. Ensure supply chain documentation matches the specific suffix designation.
Select this component for designs requiring 60W output at 2.3–2.69 GHz with 28V bias. Ideal for Doherty topologies due to its ruggedness and thermal performance. Evaluate thermal management solutions given the SMD/SMT mounting style. Compare against higher power variants if system requirements exceed 60W output.
Part of Ampleon's LDMOS portfolio for mobile broadband infrastructure. Targets 4G LTE and 5G NR base station deployments. Complements other BLC series devices offering varying power levels within the same frequency band. Supports industry-standard packaging for automated assembly.
Consider BLC8G27LS-60AV as a direct functional equivalent if available. Verify pinout compatibility and thermal pad dimensions. Assess gain and efficiency differences against original design margins. Consult Ampleon for current availability status as manufacturing updates may occur.