BLC9G15LS-400AVTZ

BLC9G15LS-400AVTZ

  • Description:RF MOSFET LDMOS 32V DFM6
  • Series:-

SKU:12a8c1626f5d Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 32V DFM6
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Technology:LDMOS
  • Frequency:1452MHz ~ 1511MHz
  • Gain:16.5dB
  • Voltage - Test:32 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:810 mA
  • Power - Output:540W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-1258-3
  • Supplier Device Package:DFM6
  • Configuration:Dual, Common Source

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BLC9G15LS-400AVTZ

Overview

The BLC9G15LS-400AVTZ is a 400 W LDMOS asymmetric Doherty power transistor designed for base station applications in the 1452 MHz to 1511 MHz frequency range. It operates with a drain-source voltage of 32 V and features a maximum junction temperature of 225 °C. The device delivers typical performance metrics including a power gain of 16.5 dB, drain efficiency of 48%, and an adjacent channel power ratio of -35 dBc under 1-carrier W-CDMA test conditions. It utilizes an air cavity plastic earless flanged SOT1258-1 package.

Feature Summary

  • Designed for low memory effects to provide excellent digital pre-distortion capability
  • Features lower output capacitance to improve performance in Doherty applications
  • Internally matched for ease of use and includes integrated ESD protection

Applications

  • RF power amplifiers for base stations
  • Multi carrier applications in the 1452 MHz to 1511 MHz frequency range

Procurement Notes

Verify the specific ordering suffix against official Ampleon documentation to confirm exact package version and compliance status. Ensure that the procurement source provides valid traceability for this RF component. Confirm RoHS Directive 2002/95/EC compliance requirements are met through official manufacturer declarations prior to finalizing acquisition.

Selection Notes

Select this component for asymmetric Doherty amplifier designs operating between 1452 MHz and 1511 MHz. Verify thermal management capabilities to maintain case temperatures within the specified operating range. Ensure the design accommodates the required gate-source voltages and quiescent currents for both main and peak devices to achieve optimal efficiency and linearity.

Part Context

This part belongs to the Ampleon BLC series of power LDMOS transistors specifically engineered for wireless infrastructure. It is optimized for high-efficiency operation in modern cellular base station architectures. The device integrates ruggedness features to withstand load mismatches common in Doherty configurations.

Replacement Considerations

Consult official Ampleon substitution guides for verified replacements. Do not assume functional equivalence with other LDMOS families without verifying impedance matching and thermal characteristics.

FAQ

What is the maximum junction temperature for the BLC9G15LS-400AVTZ?

The maximum junction temperature is 225 °C.

Does the BLC9G15LS-400AVTZ include internal matching?

Yes, the device is internally matched for ease of use.

What is the ESD sensitivity classification for this component?

It has a Charged Device Model (CDM) classification of C2A and a Human Body Model (HBM) classification of 2.

BLC9G15LS-400AVTZBLC9G15LS-400AVTZ

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