BLC9G15XS-400AVTY

Description：RF MOSFET LDMOS 32V SOT1258-7
Series：-

SKU:d235543ffe4c Category: RF FETs, MOSFETs Brand: Ampleon USA Inc.

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Product introduction

Product Detailed Parameters

Description：RF MOSFET LDMOS 32V SOT1258-7
Series：-
Mfr：Ampleon USA Inc.
Package：Tape & Reel (TR)
Technology：LDMOS
Frequency：1.452GHz ~ 1.511GHz
Gain：16.5dB
Voltage - Test：32 V
Current Rating (Amps)：-
Noise Figure：-
Current - Test：-
Power - Output：400W
Voltage - Rated：-
Grade：-
Qualification：-
Mounting Type：-
Package / Case：SOT-1258-7
Supplier Device Package：SOT-1258-7
Configuration：-

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BLC9G15XS-400AVTY

Overview

The BLC9G15XS-400AVTY is a dual N-channel LDMOS RF power transistor manufactured by Ampleon. It operates within the frequency range of 1452 MHz to 1511 MHz and delivers a peak output power (P3dB) of 400 W at a drain-source voltage (VDS) of 32 V. The device utilizes an SMD/SMT mounting style in an SOT1275-1-7 package configuration. It supports a minimum operating temperature of -40 °C and a maximum operating temperature of +125 °C.

Feature Summary

Dual N-channel LDMOS architecture for high-power RF applications
Integrated ESD protection for enhanced ruggedness
Designed for low memory effects to support digital pre-distortion

Applications

Base station power amplifiers across cellular standards
Small cell infrastructure deployments
Massive MIMO antenna arrays

Procurement Notes

Verify component authenticity through authorized Ampleon distribution channels. Confirm datasheet revisions match the specific manufacturing lot. Ensure proper handling procedures are followed due to moisture sensitivity classification. Validate that the ordering suffix corresponds exactly to the required packaging format before finalizing procurement orders.

Selection Notes

Select this component for base station designs requiring 400 W peak power capability within the 1452 MHz to 1511 MHz band. Evaluate thermal management requirements carefully, as the device dissipates significant heat during operation. Ensure the printed circuit board layout accommodates the SOT1275-1-7 package dimensions and provides adequate grounding for optimal RF performance.

Part Context

This part belongs to the BLC9G series of LDMOS transistors designed for mobile broadband infrastructure. It represents a generation of devices optimized for cost-effective volume manufacturing while maintaining high yield rates. The XS designation indicates a specific package variant tailored for space-constrained amplifier modules.