BLC9G15XS-400AVTZ

Overview

The BLC9G15XS-400AVTZ is a 400 W LDMOS packaged asymmetric Doherty power transistor designed for base station applications in the 1452 MHz to 1511 MHz frequency range. It operates with a drain-source voltage of 32 V and features a breakdown voltage of 65 V. Typical performance at Tcase = 25 °C includes a power gain of 16 dB, drain efficiency of 47.6%, and an adjacent channel power ratio of -34 dBc under 1-carrier W-CDMA conditions. The device utilizes an air cavity plastic earless flanged package (SOT1258-4) with six leads.

Feature Summary

• Designed for low memory effects providing excellent digital pre-distortion capability
• Lower output capacitance for improved performance in Doherty applications
• Internally matched for ease of use
• Integrated ESD protection

Applications

• RF power amplifiers for base stations
• Multi carrier applications in the 1452 MHz to 1511 MHz frequency range

Procurement Notes

Verify the specific ordering suffix against official Ampleon documentation to confirm exact packaging or handling specifications. Ensure compatibility with the SOT1258-4 package outline dimensions. Confirm RoHS compliance status as per Directive 2002/95/EC requirements before finalizing procurement orders.

Selection Notes

Select this component for asymmetric Doherty amplifier designs requiring high ruggedness and thermal stability. Verify that the application environment supports the specified case temperature operating range of -40 °C to +125 °C. Ensure the design accommodates the internal matching network and gate-source voltage limits for both main and peak devices.

Part Context

This part belongs to the Ampleon BLC series of power LDMOS transistors. It is specifically engineered for cellular infrastructure, targeting the 1452–1511 MHz band. The device integrates main and peak amplifier sections within a single package to facilitate efficient Doherty architecture implementation.

Replacement Considerations

Consult official Ampleon substitution guides for verified alternatives. Do not assume functional equivalence with other LDMOS families without verifying pinout, impedance, and thermal characteristics.

FAQ

What is the maximum junction temperature?

The maximum junction temperature is 225 °C.

Is the device suitable for automotive applications?

No, unless expressly stated otherwise, non-automotive qualified products are not suitable for automotive use.

What is the ESD sensitivity classification?

The device has a Charged Device Model (CDM) classification of C2A and a Human Body Model (HBM) classification of 2.