BLC9G20LS-120VTY

Overview

The BLC9G20LS-120VT is a 120 W LDMOS power transistor designed for base station applications at frequencies from 1805 MHz to 1995 MHz. It features enhanced video bandwidth and low memory effects for excellent pre-distortability. The device operates with a drain-source voltage of 28 V and quiescent current of 700 mA, delivering typical power gain of 18.5 dB and drain efficiency of 31% in class-AB operation. It includes integrated ESD protection and decoupling leads to support broadband performance.

Feature Summary

• Enhanced video bandwidth performance through dedicated decoupling leads
• Low memory effects providing excellent pre-distortability
• Internally matched design for ease of use
• Integrated ESD protection

Applications

• RF power amplifiers for base stations
• Multi-carrier applications in the 1805 MHz to 1995 MHz frequency range

Procurement Notes

Verify component authenticity by checking the package marking against the SOT1271-2 outline dimensions provided in the datasheet. Confirm that the ordering suffix matches the specified air cavity plastic earless flanged package configuration. Ensure handling procedures comply with C2A charged device model and HBM Class 2 electrostatic discharge sensitivity ratings during assembly.

Selection Notes

Select this component for designs requiring high ruggedness and low thermal resistance within the specified frequency band. Evaluate impedance matching networks using the provided load-pull data for maximum power or efficiency targets. Consider the internal matching capabilities to simplify circuit layout while ensuring adequate heat sinking to maintain junction temperature limits under continuous operation.

Part Context

This part belongs to the BLC9G20LS series of power LDMOS transistors manufactured by Ampleon. It is specifically optimized for wideband code division multiple access (W-CDMA) signals. The device utilizes an air cavity plastic earless flanged package to facilitate efficient thermal management and robust mechanical mounting in high-power RF amplifier modules.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.