SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BLC9G20LS-120VT is a 120 W LDMOS power transistor designed for base station applications in the 1805 MHz to 1995 MHz frequency range. It features enhanced video bandwidth and low memory effects for excellent pre-distortability. The device operates with a drain-source voltage of 65 V and a junction temperature up to 225 °C. Typical performance at 28 V includes a power gain of 18.5 dB, drain efficiency of 31%, and an adjacent channel power ratio of -31 dBc under two-carrier W-CDMA conditions.
Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct package version and compliance status. Confirm that the intended application environment remains within the specified absolute maximum ratings to maintain device reliability and prevent permanent damage during operation.
Select this component for designs requiring high ruggedness and low memory effects in the 1805 MHz to 1995 MHz band. Ensure the system can support the required quiescent current and provides adequate heat sinking to manage the thermal resistance from junction to case effectively under continuous operating conditions.
This part belongs to Ampleon's portfolio of LDMOS power transistors engineered for wireless infrastructure. It utilizes an air cavity plastic earless flanged package (SOT1271-2) to facilitate efficient mounting and thermal management in high-power RF amplifier modules used in modern cellular networks.
Consult official Ampleon substitution guides for verified alternatives. Do not assume pin compatibility or electrical equivalence with other models without verifying datasheet specifications.