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The BLC9G20LS-160PV is a 160 W LDMOS power transistor designed for base station applications at frequencies from 1805 MHz to 2000 MHz. It features enhanced video bandwidth and low memory effects for excellent pre-distortability. The device operates with a drain-source voltage of 28 V, delivering 38 W average output power in class-AB operation with 34.5% drain efficiency and 19.8 dB gain. It includes integrated ESD protection and decoupling leads to achieve a typical 70 MHz video bandwidth.
Verify the specific ordering suffix against official Ampleon documentation to confirm package version and RoHS compliance status. Ensure that the procurement channel provides valid traceability for this RF power component. Confirm that the received units match the SOT1275-1 air cavity plastic earless flanged package specifications before integration into the design.
Select this component for broadband operations between 1805 MHz and 2000 MHz requiring high ruggedness and thermal stability. The internal matching simplifies circuit design, while the low output capacitance supports efficient Doherty amplifier topologies. Verify that the application environment accommodates the specified junction temperature limits and thermal resistance requirements for reliable long-term operation.
This part belongs to the BLC9G series of LDMOS power transistors manufactured by Ampleon. These devices are engineered for robust performance in wireless infrastructure environments. The product utilizes advanced LDMOS technology to deliver high power density and linearity within the specified cellular frequency bands.
Consult official Ampleon substitution guides for verified alternatives. Cross-referencing requires matching electrical parameters such as breakdown voltage, power handling, and package dimensions to ensure functional compatibility without redesigning the host system.