BLC9G20LS-361AVTZ

BLC9G20LS-361AVTZ

$62.35
  • Description:RF MOSFET LDMOS 28V DFM6
  • Series:-

SKU:787381367916 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V DFM6
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Bulk,Tray
  • Technology:LDMOS
  • Frequency:1.81GHz ~ 1.88GHz
  • Gain:15.7dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:300 mA
  • Power - Output:360W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-1258-3
  • Supplier Device Package:DFM6
  • Configuration:Dual, Common Source

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BLC9G20LS-361AVTZ

Overview

The BLC9G20LS-361AVT is a 360 W LDMOS asymmetric Doherty power transistor designed for base station applications in the 1805 MHz to 1990 MHz frequency range. It features an air cavity plastic earless flanged package (SOT1258-1) with six leads and integrated ESD protection. The device exhibits excellent ruggedness, low thermal resistance, and optimized efficiency across the band. Typical drain efficiency reaches 47.5% at 1805–1880 MHz and 47.5% at 1930–1990 MHz under 1-carrier W-CDMA test conditions. Maximum junction temperature is rated at 225 °C.

Feature Summary

  • Asymmetric design tailored for optimum efficiency in Doherty amplifier configurations
  • Low output capacitance to enhance performance in broadband Doherty applications
  • Internally matched structure to simplify circuit integration
  • Integrated electrostatic discharge (ESD) protection compliant with C2A and HBM Class 2 standards

Applications

  • RF power amplifiers for base stations
  • Multi-carrier applications in the 1805 MHz to 1990 MHz frequency range

Procurement Notes

Verify component authenticity through authorized Ampleon distribution channels or official sales offices. Confirm that the ordering suffix matches the SOT1258-1 package version specified in the product data sheet. Ensure handling procedures adhere to ESD sensitivity guidelines during storage and assembly to maintain device reliability.

Selection Notes

Select this component for designs requiring high power output and efficiency in asymmetric Doherty architectures within the specified frequency band. Evaluate thermal management requirements against the junction-to-case thermal resistance values provided in the datasheet. Verify impedance matching networks using the load-pull data for both main and peak devices to ensure optimal gain and efficiency.

Part Context

This part belongs to the BLC9G series of LDMOS power transistors from Ampleon, specifically engineered for cellular infrastructure. It utilizes Laterally Diffused Metal-Oxide Semiconductor technology to deliver high linearity and power density. The device is intended for use in modern multi-standard base station platforms requiring robust performance under varying load conditions.

Replacement Considerations

Consult the official Ampleon product portfolio for direct replacements. Cross-reference specifications such as package type, operating frequency, and power ratings when evaluating alternative components.

BLC9G20LS-361AVTZBLC9G20LS-361AVTZ
$62.35
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