BLC9G20LS-470AVTY

BLC9G20LS-470AVTY

  • Description:RF MOSFET LDMOS 28V DFM6
  • Series:-

SKU:b4779d0627b2 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V DFM6
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:1.81GHz ~ 1.88GHz
  • Gain:15.7dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:400 mA
  • Power - Output:470W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-1258-3
  • Supplier Device Package:DFM6
  • Configuration:Dual, Common Source

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BLC9G20LS-470AVTY

Overview

The BLC9G20LS-470AVT is a 470 W LDMOS packaged asymmetric Doherty power transistor designed for base station applications in the 1805 MHz to 1990 MHz frequency range. It features excellent ruggedness, high efficiency, and low thermal resistance. The device includes integrated ESD protection and is internally matched for ease of use. Typical drain efficiency reaches 47.5% at 80 W output power with 1-carrier W-CDMA signals. Peak output power under pulsed CW conditions is up to 425 W. The component utilizes an air cavity plastic earless flanged package (SOT1258-1) with six leads.

Feature Summary

  • Asymmetric design optimized for Doherty amplifier configurations
  • Low thermal resistance ensuring stable operation
  • Internally matched for simplified circuit integration
  • Integrated electrostatic discharge protection

Applications

  • RF power amplifiers for base stations
  • Multi-carrier applications in the 1805 MHz to 1990 MHz range

Procurement Notes

Verify the specific ordering suffix against official Ampleon documentation to confirm exact package version and compliance status. Ensure procurement channels provide valid product data sheets matching the requested part number. Confirm RoHS directive compliance requirements prior to purchase.

Selection Notes

Select this component for asymmetric Doherty architectures requiring high efficiency across the 1805 MHz to 1990 MHz band. Evaluate thermal management capabilities based on the specified junction-to-case thermal resistance values. Verify impedance matching networks align with the provided load-pull data for optimal performance.

Part Context

This device belongs to the BLC9 series of power LDMOS transistors manufactured by Ampleon. It is specifically engineered for wireless infrastructure, offering robust performance in multi-carrier environments. The product line emphasizes reliability and efficiency for modern cellular base station deployments.

Replacement Considerations

Consult official Ampleon documentation for verified substitute part numbers. Do not assume functional equivalence with other models without cross-referencing electrical specifications and pin configurations.

BLC9G20LS-470AVTYBLC9G20LS-470AVTY

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