BLC9G20XS-400AVTZ

Overview

The BLC9G20XS-400AVTZ is a 400 W LDMOS asymmetric Doherty power transistor designed for base station applications in the 1805 MHz to 1880 MHz and 1930 MHz to 1995 MHz frequency ranges. It features a drain-source breakdown voltage of 65 V, a typical power gain of 16.2 dB, and a drain efficiency of 45% at 87 W output power under 1-carrier W-CDMA testing conditions. The device utilizes an SOT1258-4 air cavity plastic earless flanged package with six leads.

Feature Summary

• Designed for low memory effects to provide excellent digital pre-distortion capability
• Features lower output capacitance for improved performance in Doherty applications
• Internally matched for ease of use with integrated ESD protection

Applications

• RF power amplifiers for base stations
• Multi carrier applications in the 1805 MHz to 1880 MHz range
• Multi carrier applications in the 1930 MHz to 1995 MHz range

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct packaging configuration. Confirm that the component meets RoHS Directive 2002/95/EC requirements for hazardous substance restrictions before finalizing procurement specifications.

Selection Notes

Select this component for designs requiring high ruggedness and thermal stability in asymmetric Doherty architectures. Ensure the application circuit supports the specified gate-source voltage limits and provides adequate heat sinking to maintain case temperatures within the operational range.

Part Context

This part belongs to the BLC9G series of power LDMOS transistors manufactured by Ampleon. It is specifically engineered for cellular infrastructure, offering a balance of high power output and linearity suitable for modern multi-carrier modulation schemes used in wireless communication networks.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.