BLC9G20XS-550AVTY

BLC9G20XS-550AVTY

  • Description:RF MOSFET LDMOS 28V SOT1258-7
  • Series:-

SKU:f4587ff19dee Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V SOT1258-7
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:1.805GHz ~ 1.88GHz
  • Gain:15.4dB
  • Voltage - Test:28 V
  • Current Rating (Amps):2.8µA
  • Noise Figure:-
  • Current - Test:1.1 A
  • Power - Output:580W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:SOT-1258-7
  • Supplier Device Package:SOT-1258-7
  • Configuration:-

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BLC9G20XS-550AVTY

Overview

The BLC9G20XS-550AVT is a 550 W LDMOS asymmetric Doherty power transistor designed for base station applications in the 1805 MHz to 1880 MHz frequency range. It features a drain-source breakdown voltage of 65 V and operates with a typical case temperature range from -40 °C to +125 °C. In an asymmetrical Doherty test circuit at VDS = 28 V, it delivers 85 W average output power with 15.4 dB gain and 44.5% drain efficiency using a 1-carrier W-CDMA signal. The device utilizes an SOT1258-4 air cavity plastic earless flanged package.

Feature Summary

  • Optimized for low memory effects to support excellent digital pre-distortion capability
  • Lower output capacitance improves performance specifically in Doherty configurations
  • Internally matched structure simplifies integration into RF circuits
  • Integrated ESD protection enhances handling robustness

Applications

  • RF power amplifiers for base stations
  • Multi-carrier applications in the 1805 MHz to 1880 MHz frequency range

Procurement Notes

Verify component authenticity through authorized Ampleon distribution channels. Confirm that the received part matches the SOT1258-4 package outline and ordering information specified in the datasheet. Ensure proper electrostatic discharge precautions are observed during storage and installation to maintain device integrity.

Selection Notes

Select this component for high-efficiency asymmetric Doherty amplifier designs operating between 1805 MHz and 1880 MHz. Evaluate thermal resistance characteristics against system cooling capabilities. Verify impedance matching requirements for both main and peak devices to achieve optimal power gain and drain efficiency targets.

Part Context

This device belongs to the BLC9G20XS series of power LDMOS transistors manufactured by Ampleon. It is engineered specifically for cellular infrastructure, providing high ruggedness and thermal stability required for continuous operation in demanding base station environments.

Replacement Considerations

Consult official Ampleon documentation for verified substitute part numbers. Do not assume functional equivalence with other models without confirming pinout, impedance, and electrical specifications match the design requirements.

BLC9G20XS-550AVTYBLC9G20XS-550AVTY

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