BLC9G20XS-550AVTZ

Overview

The BLC9G20XS-550AVTZ is a dual N-channel LDMOS power transistor designed for base station applications in the 1805 MHz to 1880 MHz frequency range. It features a drain-source breakdown voltage of 65 V and operates with a typical case temperature range from -40 °C to +125 °C. In an asymmetrical Doherty test circuit at VDS = 28 V, it delivers an average output power of 85 W with a gain of 15.4 dB and drain efficiency of 44.5%. The device utilizes an SOT1258-4 air cavity plastic earless flanged package.

Feature Summary

• Optimized for low memory effects to support digital pre-distortion
• Internally matched for simplified integration
• Integrated ESD protection compliant with C2A and HBM Class 2 standards

Applications

• RF power amplifiers for base stations
• Multi-carrier applications in the 1805 MHz to 1880 MHz range
• Asymmetrical Doherty amplifier designs

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to confirm packaging details such as reel quantity or tape specifications. Confirm RoHS compliance status and check for any regional export control restrictions before finalizing procurement orders.

Selection Notes

Select this component for high-efficiency Doherty architectures requiring ruggedness under load mismatch conditions. Ensure thermal management supports the specified junction-to-case resistance. Verify that the gate drive voltages align with the main and peak amplifier requirements defined in the limiting values table.

Part Context

This part belongs to Ampleon's BLC series of RF power transistors. It is specifically engineered for cellular infrastructure, offering a balance of high power density and linearity. The device represents a mature silicon LDMOS technology optimized for modern multi-standard base station deployments.

Replacement Considerations

Consult official substitution guides for verified replacements. Cross-referencing requires matching package type, pinout configuration, and electrical characteristics within the target frequency band.