BLC9G22LS-120VTZ

Overview

The BLC9G22LS-120VT is a 120 W LDMOS power transistor designed for base station applications in the 2110 MHz to 2180 MHz frequency range. It features enhanced video bandwidth and low memory effects for improved pre-distortability. The device operates with a drain-source voltage of 65 V maximum and a junction temperature limit of 225 °C. In a common source class-AB test circuit at Tcase = 25 °C, it delivers typical performance including 18.1 dB gain, 31% drain efficiency, and -32.5 dBc ACPR5M under 2-carrier W-CDMA conditions. The part utilizes an air cavity plastic earless flanged package (SOT1271-2) with six leads.

Feature Summary

• Enhanced video bandwidth performance enabled by decoupling leads
• Low thermal resistance providing excellent thermal stability
• Lower output capacitance optimized for Doherty applications
• Internally matched design for ease of use

Applications

• RF power amplifiers for base stations
• Multi-carrier applications in the 2110 MHz to 2180 MHz frequency range

Procurement Notes

Verify component authenticity through authorized Ampleon distribution channels. Confirm RoHS compliance status via official product details. Ensure handling procedures adhere to ESD sensitivity classifications C2A and HBM Class 2 as specified in the datasheet. Validate package integrity upon receipt to prevent damage to the flanged SOT1271-2 housing.

Selection Notes

Select this component for broadband operations requiring high ruggedness and low memory effects. The internal matching simplifies circuit design compared to unmatched alternatives. Consider the specific thermal management requirements due to the 0.47 K/W junction-to-case thermal resistance. Verify compatibility with 28 V supply systems and 700 mA quiescent current biasing for optimal class-AB performance.

Part Context

This LDMOS transistor belongs to Ampleon's portfolio of power devices engineered for telecommunications infrastructure. The LS designation typically indicates specific packaging or feature variations within the broader BLC series. It serves as a critical active element in linear RF power amplifier stages, replacing older generation transistors that lack comparable video bandwidth capabilities.

Replacement Considerations

No public confirmed substitute part numbers are documented in the provided datasheet.