BLC9G22LS-160VTZ

Overview

The BLC9G22LS-160VT is a 160 W LDMOS power transistor designed for base station applications in the 2110 MHz to 2200 MHz frequency range. It operates with a drain-source voltage of 28 V and delivers an average output power of 35 W in a common source class-AB configuration. The device provides a typical power gain of 18.4 dB and a drain efficiency of 33% under these conditions. It features a junction-to-case thermal resistance of 0.47 K/W and is housed in an SOT1271-2 air cavity plastic earless flanged package.

Feature Summary

• Internally matched for ease of use
• Integrated ESD protection
• Low memory effects providing excellent pre-distortability

Applications

• RF power amplifier for W-CDMA base stations
• Multi carrier applications in the 2110 MHz to 2200 MHz frequency range

Procurement Notes

Verify component authenticity by cross-referencing the manufacturer's official datasheet documentation. Confirm that the specific ordering suffix matches the required package version, as variations exist within the product family. Ensure compliance with relevant environmental directives before integration into final designs.

Selection Notes

Evaluate the device based on its video bandwidth capabilities to ensure full band operation support. Consider the low thermal resistance for effective heat dissipation requirements. Assess ruggedness specifications against expected load mismatch conditions to guarantee reliability during continuous operation.

Part Context

This component belongs to Ampleon's portfolio of RF power transistors utilizing LDMOS technology. It is engineered specifically for high-efficiency amplification in wireless communication infrastructure. The design prioritizes linearity and thermal stability for demanding base station environments.

Replacement Considerations

Consult official substitution lists from the manufacturer for verified alternatives. Verify pinout compatibility and electrical parameter alignment before considering any replacement options.