BLC9G22XS-400AVTZ

BLC9G22XS-400AVTZ

$63.66
  • Description:RF MOSFET LDMOS 32V SOT1258-4
  • Series:-

SKU:df76494f288c Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 32V SOT1258-4
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Bulk,Tray
  • Technology:LDMOS
  • Frequency:2.11GHz ~ 2.2GHz
  • Gain:15.3dB
  • Voltage - Test:32 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:810 mA
  • Power - Output:580W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-1258-4
  • Supplier Device Package:SOT1258-4
  • Configuration:-

Download product information

BLC9G22XS-400AVTZ

Overview

The BLC9G22XS-400AVT is a 400 W LDMOS asymmetric Doherty power transistor designed for base station applications in the 2110 MHz to 2200 MHz frequency range. It operates at VDS = 32 V with a drain-source breakdown voltage of 65 V. Typical performance includes a power gain of 15.3 dB, drain efficiency of 45%, and ACPR of -34 dBc under 1-carrier W-CDMA conditions. The device features an air cavity plastic earless flanged package (SOT1258-4) with six leads.

Feature Summary

  • Designed for low memory effects providing excellent digital pre-distortion capability
  • Lower output capacitance for improved performance in Doherty applications
  • Internally matched for ease of use
  • Integrated ESD protection

Applications

  • RF power amplifiers for base stations
  • Multi carrier applications in the 2110 MHz to 2200 MHz frequency range

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct package version and compliance status. Confirm RoHS Directive 2002/95/EC compliance requirements for your region. Check the latest datasheet revision for any updates to absolute maximum ratings or thermal characteristics before finalizing procurement specifications.

Selection Notes

Select this component for asymmetric Doherty amplifier architectures requiring high efficiency and ruggedness. Ensure the design accommodates the specified gate-source voltages and quiescent currents. Verify that the PCB material and layout match the recommended test circuit parameters for optimal impedance matching and thermal dissipation.

Part Context

This part belongs to Ampleon's portfolio of RF power transistors optimized for cellular infrastructure. It utilizes Laterally Diffused Metal-Oxide Semiconductor technology to deliver high power density. The SOT1258-4 package facilitates efficient heat transfer from the junction to the case, supporting reliable operation in demanding base station environments.

Replacement Considerations

Consult official Ampleon substitution guides for verified replacements. Cross-reference pin configurations and electrical parameters carefully when considering alternative devices.

FAQ

What is the maximum load mismatch the device can withstand?

The BLC9G22XS-400AVT can withstand a load mismatch corresponding to VSWR = 10:1 through all phases under specified operating conditions.

What is the ESD sensitivity classification?

The device has a Charged Device Model (CDM) classification of C2A and a Human Body Model (HBM) classification of 2.

What is the typical thermal resistance from junction to case?

The typical thermal resistance (Rth(j-c)) is 0.25 k/W at PL = 85 W and 0.26 k/W at PL = 110 W.

BLC9G22XS-400AVTZBLC9G22XS-400AVTZ
$63.66
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