BLC9G27LS-151AVY

BLC9G27LS-151AVY

  • Description:RF MOSFET LDMOS 28V SOT1275-3
  • Series:-

SKU:3226039cc849 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V SOT1275-3
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:2.5GHz ~ 2.69GHz
  • Gain:15.6dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:280 mA
  • Power - Output:155W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-1275-3
  • Supplier Device Package:SOT-1275-3
  • Configuration:Dual, Common Source

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BLC9G27LS-151AVY

Overview

The BLC9G27LS-151AVY is a 150 W LDMOS asymmetrical Doherty power transistor designed for base station applications in the 2496 MHz to 2690 MHz frequency range. It features a drain-source breakdown voltage of 65 V and operates at a standard test voltage of 28 V. The device delivers a typical output power of 155 W at 3 dB gain compression, with a power gain of 15.6 dB and a drain efficiency of 46% under pulsed CW conditions. It exhibits excellent ruggedness, capable of withstanding a VSWR of 10:1 through all phases. The component utilizes an air cavity plastic earless flanged package (SOT1275-1) and includes integrated ESD protection.

Feature Summary

  • Designed specifically for asymmetrical Doherty amplifier architectures
  • Features decoupling leads to enable improved video bandwidth performance
  • Incorporates lower output capacitance to enhance Doherty application efficiency
  • Internally matched for simplified circuit integration

Applications

  • RF power amplifiers for LTE base stations
  • Multi-carrier applications within the 2496 MHz to 2690 MHz band

Procurement Notes

Verify the specific suffix 'Y' against official Ampleon documentation to confirm packaging or handling variations. Ensure compliance with ESD sensitivity standards C2A and HBM Class 2 during storage and assembly. Confirm RoHS Directive 2002/95/EC compliance requirements for the target manufacturing environment.

Selection Notes

Select this component for high-efficiency Doherty PA designs requiring robust load mismatch tolerance. Evaluate thermal resistance characteristics relative to the specific heatsink design. Verify impedance matching networks against the provided load-pull data for optimal power and efficiency targets.

Part Context

This part belongs to the BLC9G27LS series of LDMOS transistors from Ampleon. These devices are engineered for wireless infrastructure, offering high linearity and power density. The specific model targets modern cellular bands, supporting complex modulation schemes required by contemporary communication standards.

Replacement Considerations

Consult official Ampleon substitution guides for verified equivalents. Cross-reference pinout configurations and thermal specifications when evaluating alternative components.

BLC9G27LS-151AVYBLC9G27LS-151AVY

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