BLC9G27LS-151AVZ

BLC9G27LS-151AVZ

  • Description:RF MOSFET LDMOS 28V DFM6
  • Series:-

SKU:f430d66b65cd Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V DFM6
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Technology:LDMOS
  • Frequency:2.5GHz ~ 2.69GHz
  • Gain:15.6dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:280 mA
  • Power - Output:155W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-1258-3
  • Supplier Device Package:DFM6
  • Configuration:Dual, Common Source

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BLC9G27LS-151AVZ

Overview

The BLC9G27LS-151AV is a 150 W LDMOS packaged asymmetrical Doherty power transistor designed for base station applications at frequencies from 2496 MHz to 2690 MHz. It operates with a drain-source voltage of 28 V and features an air cavity plastic earless flanged package (SOT1275-1). Typical performance includes a power gain of 15.6 dB, drain efficiency of 46%, and output power of 28.2 W under 1-carrier W-CDMA conditions. The device exhibits excellent ruggedness, capable of withstanding a VSWR of 10:1 through all phases.

Feature Summary

  • Designed specifically for low memory effects to provide excellent pre-distortability in complex modulation schemes.
  • Features decoupling leads that enable improved video bandwidth for wideband signal processing.
  • Incorporates lower output capacitance to enhance performance characteristics within Doherty amplifier architectures.
  • Includes integrated ESD protection compliant with C2A charged device model standards.

Applications

  • RF power amplifiers for LTE base stations
  • Multi-carrier applications in the 2496 MHz to 2690 MHz frequency range
  • Asymmetrical Doherty power amplifier designs

Procurement Notes

Verify the specific ordering suffix against official Ampleon documentation to confirm compliance with RoHS directives and packaging specifications. Ensure procurement channels are authorized distributors to guarantee component authenticity and traceability. Confirm thermal management requirements align with the specified junction temperature limits during system integration.

Selection Notes

Select this component for high-efficiency Doherty PA implementations requiring robust load mismatch tolerance. Evaluate impedance matching networks based on the provided main and peak device load-pull data. Consider the internal matching and decoupling leads when designing PCB layouts to optimize video bandwidth and minimize external passive components.

Part Context

This part belongs to Ampleon's LDMOS power transistor portfolio targeting wireless infrastructure. It complements other broadband and narrowband RF transistors by offering specialized asymmetrical Doherty optimization. The SOT1275-1 package facilitates efficient heat dissipation for high-power density base station modules.

Replacement Considerations

Consult official Ampleon substitution guides for verified equivalents. Cross-referencing requires matching frequency ranges, power levels, and package dimensions. Verify pinout compatibility and electrical parameters before implementing any alternative devices in existing designs.

FAQ

What is the maximum load mismatch the device can withstand?

The BLC9G27LS-151AV can withstand a load mismatch corresponding to a VSWR of 10:1 through all phases under specified operating conditions.

How does the device handle video bandwidth?

Decoupling leads are incorporated into the design to enable improved video bandwidth, supporting wideband multi-carrier applications.

What is the typical drain efficiency at 28 W output?

Under 1-carrier W-CDMA test conditions at 28 W average output power, the typical drain efficiency is 46%.

BLC9G27LS-151AVZBLC9G27LS-151AVZ

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