BLC9H10XS-350AY

Overview

The BLC9H10XS-350A is a dual N-channel LDMOS power transistor designed for asymmetric Doherty base station applications in the 617 MHz to 960 MHz range. It features an air cavity plastic earless flanged package (SOT1273-1) with four leads. The device provides 350 W output power at 1 dB gain compression and achieves up to 54% drain efficiency under 1-carrier W-CDMA test conditions. Key electrical parameters include a drain-source breakdown voltage of 108 V, a gate-source threshold voltage of 2.0 V typical, and a thermal resistance from junction to case of 0.4 K/W. It operates within a case temperature range of -40 °C to +125 °C.

Feature Summary

• Designed specifically for low memory effects to support excellent digital pre-distortion capability.
• Features internal integrated wideband input matching to simplify circuit design.
• Incorporates lower output capacitance to improve performance in Doherty amplifier configurations.
• Provides high ruggedness capable of withstanding significant load mismatches.

Applications

• RF power amplifiers for base stations
• Multi-carrier applications in the 617 MHz to 960 MHz frequency range

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current catalog to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets RoHS compliance requirements as defined in the product details on the official Ampleon website before finalizing procurement orders.

Selection Notes

Select this component for asymmetric Doherty architectures requiring high linearity and efficiency in UHF bands. Ensure the design accommodates the SOT1273-1 package dimensions and utilizes the recommended impedance values provided in the datasheet for both main and peak devices to achieve optimal performance.

Part Context

This part belongs to the BLC9H10XS series of power LDMOS transistors manufactured by Ampleon. These components are engineered for high-power RF applications, specifically targeting the demanding requirements of modern cellular base station infrastructure operating across multiple frequency bands.

Replacement Considerations

Consult the official Ampleon documentation for verified substitute part numbers. Do not assume functional equivalence with other models without validating pinout compatibility and electrical characteristics against the specific application requirements.

FAQ

What is the maximum drain-source voltage rating?

The absolute maximum drain-source voltage (VDS) rating is 105 V.

How does the device handle electrostatic discharge?

The device includes integrated ESD protection and is classified as C3 under the Charged Device Model and Class 2 under the Human Body Model.

What is the thermal resistance from junction to case?

The thermal resistance (Rth(j-c)) is typically 0.4 K/W under standard test conditions.