BLC9H10XS-500AZ

Overview

The BLC9H10XS-500A is a 500 W LDMOS asymmetric Doherty power transistor designed for base station applications from 617 MHz to 960 MHz. It features dual N-channel architecture with a drain-source voltage of 48 V and breakdown voltage of 105 V. The device operates within a case temperature range of -40 °C to +125 °C and utilizes an SOT1273-1 air cavity plastic earless flanged package. Typical performance includes a power gain of 17.4 dB to 19.3 dB, drain efficiency up to 53%, and ACPR below -29 dBc under 1-carrier W-CDMA testing.

Feature Summary

• Designed for low memory effects providing excellent digital pre-distortion capability
• Lower output capacitance for improved performance in Doherty applications
• Internal integrated wideband input matching for ease of use
• Integrated ESD protection

Applications

• RF power amplifiers for base stations
• Multi carrier applications in the 617 MHz to 960 MHz frequency range

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current catalog to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status directly through official Ampleon channels prior to procurement. Ensure all handling procedures strictly adhere to the specified CDM Class 3 and HBM Class 2 electrostatic discharge sensitivity ratings during storage and assembly.

Selection Notes

Select this component for high-efficiency asymmetric Doherty amplifier designs requiring robust ruggedness. Verify that the application circuit can maintain the required case temperature between -40 °C and +125 °C. Ensure the design accommodates the specific gate-source voltage limits and thermal resistance characteristics defined in the datasheet for optimal reliability.

Part Context

This part belongs to the BLC9 series of power LDMOS transistors manufactured by Ampleon. It is specifically engineered for wireless infrastructure, offering high linearity and efficiency in multi-carrier environments. The device integrates internal matching networks to simplify RF circuit design while maintaining high power density in a compact flanged package suitable for high-volume production.

Replacement Considerations

Consult the official Ampleon replacement guide for verified cross-reference part numbers. Do not substitute with generic LDMOS devices without validating impedance matching and thermal performance.