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The BLC9H10XS-505AY is a dual N-channel LDMOS RF power transistor manufactured by Ampleon. Designed for UHF applications, it operates within a frequency range of 617 MHz to 960 MHz. The device delivers a typical continuous wave output power of 500 W with a gain of 18.2 dB at 48 V drain bias. It features a low on-resistance of 50 mOhms and a breakdown voltage of 48 V. Packaged in the SOT1273-1 surface-mount format, it supports operation from -40°C to +125°C.
Verify the specific suffix against official Ampleon documentation to confirm package type and reel specifications. Ensure compatibility with existing thermal management designs. Confirm RoHS compliance status through the manufacturer's current datasheet before finalizing procurement orders.
Select this component for applications requiring approximately 500 W output power in the 617-960 MHz range. Compare its 50 mOhm on-resistance and 18.2 dB gain against alternative models like the BLC9H10XS-600A if higher power or different packaging is required. Verify that the SOT1273-1 footprint fits the target PCB layout constraints.
This part belongs to Ampleon's BLC9H10XS series of UHF LDMOS transistors. These devices are engineered for high-efficiency linear amplification in broadcast and communication infrastructure. The series offers various power levels and package options to suit different transmitter architectures and thermal requirements.
The BLC9H10XS-600A is a documented variant within the same family offering 600 W output power. It utilizes the SOT1250-2 package, which differs physically from the SOT1273-1 used by the BLC9H10XS-505AY. Direct pin-to-pin replacement is not possible due to the package difference.