BLC9H10XS-606AY

BLC9H10XS-606AY

$90.45
  • Description:RF MOSFET LDMOS 48V SOT1250-4
  • Series:-

SKU:89b2621a343c Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 48V SOT1250-4
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:616MHz ~ 960MHz
  • Gain:18dB
  • Voltage - Test:48 V
  • Current Rating (Amps):1.4µA
  • Noise Figure:-
  • Current - Test:1.8 A
  • Power - Output:600W
  • Voltage - Rated:110 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-1250-4
  • Supplier Device Package:SOT1250-4
  • Configuration:2 N-Channel (Dual) Common Source

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BLC9H10XS-606AY

Overview

The BLC9H10XS-606AY is a dual N-channel LDMOS RF power transistor manufactured by Ampleon. Designed for high-power applications in the UHF band, it operates within a frequency range of 616 MHz to 960 MHz. The device delivers a peak output power of 630 W with a typical gain of 18.0 dB at a drain voltage of 48 V. It features a low on-resistance of 53.9 mOhms and utilizes an SOT1250-4 package suitable for surface mount installation. The component supports operation across a temperature range from -40°C to +125°C.

Feature Summary

  • Dual N-channel LDMOS architecture providing high power density
  • Optimized for UHF frequency bands between 616 MHz and 960 MHz
  • High peak output power capability of 630 W
  • Robust thermal performance for stable operation

Applications

  • Wireless communication infrastructure
  • Broadcasting systems
  • UHF radar applications

Procurement Notes

Verify the specific suffix 'AY' against official Ampleon documentation to confirm reel packaging specifications and tape-and-reel dimensions. Ensure compatibility with standard SMD/SMT assembly processes for the SOT1250-4 package. Confirm moisture sensitivity levels and reflow soldering profiles prior to manufacturing integration.

Selection Notes

Select this component when designing circuits requiring high efficiency and linearity in the 616–960 MHz range. Compare the 630 W peak power and 18.0 dB gain against alternative models like the BLC9H10XS-600A or BLP9H10S-850AVT based on specific frequency and voltage requirements. Evaluate thermal management needs given the 125°C maximum junction temperature rating.

Part Context

This part belongs to the BLC9H10XS series of high-voltage, high-power LDMOS transistors. These devices are engineered for ruggedness and reliability in demanding RF environments. The series typically includes variants such as the BLC9H10XS-600A and BLC9H10XS-505A, differentiated by package type and specific power ratings.

Replacement Considerations

Potential substitutes include the BLC9H10XS-600A (SOT1250-2 package) and BLP9H10S-850AVT (OMP-1230-6F package). Verify pinout compatibility and thermal pad configurations before substitution.

BLC9H10XS-606AYBLC9H10XS-606AY
$90.45
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