BLC9H10XS-60PY

Overview

The BLC9H10XS-60P is a 60 W LDMOS symmetric power transistor designed for base station applications in the 400 MHz to 1000 MHz frequency range. It features a drain-source voltage of 105 V and operates within a case temperature range of -40 °C to +125 °C. The device utilizes an SOT1273-1 air cavity plastic earless flanged package with four leads. Typical performance at 940 MHz includes a gain of 16.5 dB, drain efficiency of 13%, and output power of 35 dBm under 1-carrier W-CDMA conditions.

Feature Summary

• Integrated ESD protection
• Excellent ruggedness
• High efficiency
• Excellent thermal stability

Applications

• RF power amplifiers for base stations
• Multi carrier applications in the 400 MHz to 1000 MHz frequency range

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct packaging and handling specifications. Confirm that the component meets all required environmental standards and RoHS compliance criteria before finalizing procurement orders.

Selection Notes

Select this component for broadband operations requiring high power output between 400 MHz and 1000 MHz. Ensure the design accommodates the SOT1273-1 package dimensions and provides adequate thermal management for the junction-to-case resistance characteristics specified in the datasheet.

Part Context

This part belongs to Ampleon's portfolio of LDMOS power transistors engineered for wireless infrastructure. It is specifically optimized for wideband coverage in cellular base station architectures, providing robust performance across UHF and lower VHF bands.

Replacement Considerations

Consult official substitution lists for verified alternatives. Cross-reference pinout configurations and thermal resistance values when evaluating potential replacements to maintain circuit integrity.