BLD6G21L-50,112

Overview

The BLD6G21L-50,112 is an RF MOSFET based on LDMOS technology, manufactured by Ampleon USA Inc. It operates with a test voltage of 28 V and a test current of 170 mA. The device provides a gain of 14.5 dB at a frequency of 2.02 GHz, delivering an output power of 8 W. It is housed in a CDFM4 package, also identified as SOT-1130A, and supports chassis mounting.

Feature Summary

• Utilizes LDMOS technology for high-frequency RF performance
• Designed for chassis mounting applications
• Provides 8 W output power at 2.02 GHz

Applications

• RF power amplification in communication systems
• Industrial, Scientific, and Medical (ISM) equipment
• Broadband infrastructure components

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component for applications requiring 8 W output power at approximately 2 GHz. Ensure the design supports chassis mounting and accommodates the CDFM4/SOT-1130A package dimensions. Confirm that the 28 V operating voltage aligns with the system's power supply architecture and thermal management capabilities for LDMOS devices.

Part Context

Ampleon specializes in RF power transistors for data and energy transmission. The BLD6G21L-50,112 belongs to their portfolio of LDMOS-based RF FETs, designed for robust performance in broadband and specialized RF applications. The company leverages decades of expertise in semiconductor development for industrial and communication sectors.

Replacement Considerations

Cross-reference with other Ampleon LDMOS devices in the CDFM4 package offering similar 8 W output at 2 GHz. Verify pinout compatibility and thermal characteristics before substitution.